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SQJ403BEEP PDF даташит

Спецификация SQJ403BEEP изготовлена ​​​​«Vishay» и имеет функцию, называемую «Automotive P-Channel MOSFET».

Детали детали

Номер произв SQJ403BEEP
Описание Automotive P-Channel MOSFET
Производители Vishay
логотип Vishay логотип 

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SQJ403BEEP Даташит, Описание, Даташиты
www.vishay.com
SQJ403BEEP
Vishay Siliconix
Automotive P-Channel 30 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) () at VGS = -10 V
RDS(on) () at VGS = -4.5 V
ID (A)
Configuration
Package
-30
0.0085
0.0200
-30 a
Single
PowerPAK SO-8L
PowerPAK® SO-8L Single
FEATURES
• TrenchFET® power MOSFET
• ESD protection: 3000 V
• AEC-Q101 qualified
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
S
6.15 mm
1
Top View
5.13 mm
D
1
2S
3S
4S
G
Bottom View
G
5400 Ω
P-Channel
D
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a
Continuous Source Current (Diode conduction) a
Pulsed Drain Current b
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation b
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak temperature) d, e
TC = 25 °C
TC = 125 °C
L = 10 mH
TC = 25 °C
TC = 125 °C
VDS
VGS
ID
IS
IDM
IAS
EAS
PD
TJ, Tstg
LIMIT
-30
± 20
-30
-30
-30
-84
-6.5
211
68
22
-55 to +175
260
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
PCB mount c
SYMBOL
RthJA
RthJC
LIMIT
68
2.2
UNIT
°C/W
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR4 material).
d. See solder profile (www.vishay.com/doc?73257). The end of the lead terminal of PowerPAK SO-8L is exposed copper (not plated) as a result
of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure
adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
S16-1461-Rev. A, 19-Jul-16
1
Document Number: 67407
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000









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SQJ403BEEP Даташит, Описание, Даташиты
www.vishay.com
SQJ403BEEP
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
Drain-Source On-State Resistance a
Forward Transconductance b
Dynamic b
VDS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = -250 μA
VDS = VGS, ID = -250 μA
VDS = 0 V, VGS = ± 12 V
VDS = 0 V, VGS = ± 20 V
VGS = 0 V
VDS = -30 V
VGS = 0 V VDS = -30 V, TJ = 125 °C
VGS = 0 V VDS = -30 V, TJ = 175 °C
VGS = -10 V
VDS -5 V
VGS = -10 V
ID = -10 A
VGS = -10 V ID = -10 A, TJ = 125 °C
VGS = -10 V ID = -10 A, TJ = 175 °C
VGS = -4.5 V
ID = -7 A
VDS = -10 V, ID = -10 A
Output Capacitance
Coss
Total Gate Charge c
Qg
Gate-Source Charge c
Qgs
Gate-Drain Charge c
Qgd
Gate Resistance
Rg
Turn-On Delay Time c
td(on)
Rise Time c
tr
Turn-Off Delay Time c
td(off)
Fall Time c
tf
Source-Drain Diode Ratings and Characteristics b
VGS = 0 V
VDS = -15 V, f = 1 MHz
VGS = -10 V VDS = -15 V, ID = -10 A
f = 1 MHz
VDD = -15 V, RL = 1.5
ID -10 A, VGEN = -10 V, Rg = 1
Pulsed Current a
Forward Voltage
ISM
VSD IF = -3 A, VGS = 0 V
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
MIN. TYP. MAX. UNIT
-30 -
-
-1.5 -2.0 -2.5
V
- - ± 2 μA
- - ± 1 mA
- - -1
- - -50 μA
- - -250
-30 -
-A
- 0.0070 0.0085
- - 0.0130
- - 0.0150
- 0.0120 0.0200
- 32 - S
- 712 890 pF
- 75 164
- 9.5 - nC
- 19 -
2 4.3 7.5 k
- 38 57
- 82 123
ns
- 134 201
- 178 214
- - -84 A
- -0.75 -1.2 V
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S16-1461-Rev. A, 19-Jul-16
2
Document Number: 67407
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000









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SQJ403BEEP Даташит, Описание, Даташиты
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
SQJ403BEEP
Vishay Siliconix
0.005
0.004
TJ = 25 °C
0.003
0.002
0.001
0.000
0
7 14 21 28
VGS - Gate-to-Source Voltage (V)
Gate Current vs. Gate-Source Voltage
35
80
VGS = 10 V thru 4 V
60
VGS = 3 V
40
20
0
0
0.025
2468
VDS - Drain-to-Source Voltage (V)
Output Characteristics
10
10-2
10-3
10-4
10-5
10-6
TJ = 150 °C
10-7
10-8
TJ = 25 °C
10-9
10-10
0
6 12 18 24
VGS - Gate-to-Source Voltage (V)
Gate Current vs. Gate-Source Voltage
30
50
40
30
20 TC = 25 °C
10
TC = 125 °C
TC = -55 °C
0
01234
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
3000
5
0.020
0.015
VGS = 4.5 V
2400
1800
0.010
0.005
VGS = 10 V
1200
600
Coss
0
0 15 30 45 60
ID - Drain Current (A)
On-Resistance vs. Drain Current
0
0 5 10 15 20 25 30
VDS - Drain-to-Source Voltage (V)
Capacitance
S16-1461-Rev. A, 19-Jul-16
3
Document Number: 67407
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000










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Номер в каталогеОписаниеПроизводители
SQJ403BEEPAutomotive P-Channel MOSFETVishay
Vishay

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