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RB021VA-90 PDF даташит

Спецификация RB021VA-90 изготовлена ​​​​«ROHM Semiconductor» и имеет функцию, называемую «Schottky Barrier Diode».

Детали детали

Номер произв RB021VA-90
Описание Schottky Barrier Diode
Производители ROHM Semiconductor
логотип ROHM Semiconductor логотип 

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RB021VA-90 Даташит, Описание, Даташиты
Diodes
Schottky barrier diode
RB021VA-90
RB021VA-90
zApplications
General rectification
zFeatures
1) Small power mold type
(TUMD2)
2) Low VF
3) High reliability
zStructure
Silicon epitaxial planar
zExternal dimensions (Unit : mm)
1.3±0.05
0.17±0.1
   0.05
zLand size figure (Unit : mm)
1.1
0.8±0.05
ROHM : TUMD2
0.6±0.2
    0.1
dot (year week factory) + day
zTaping dimensions (Unit : mm)
4.0±0.1 2.0±0.05
φ1.55±0.1
      0
TUMD2
zStructure
0.25±0.05
1.43±0.05
4.0±0.1
φ1.0±0.2
     0
zAbsolute maximum ratings (Ta=25°C)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current
Forward current surge peak(60Hz1cyc)
Junction temperature
Storage temperature
Symbol
VRM
VR
Io
IFSM
Tj
Tstg
Limits
90
90
0.2
5
125
-40 to +125
0.9±0.08
Unit
V
V
A
A
zElectrical characteristic (Ta=25°C)
Parameter
Symbol
Forward voltage
Reverse current
VF
IR
Min.
-
-
Typ.
-
-
Max.
0.49
900
Unit Conditions
V IF=200mA
µA VR=90V
Rev.B
1/3









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RB021VA-90 Даташит, Описание, Даташиты
Diodes
RB021VA-90
zElectrical characteristic curves
1000
Ta=125℃
100 Ta=75℃
10
Ta=25℃
Ta=-25℃
1
0 100 200 300 400 500 600
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
100000
Ta=125℃
10000
1000
Ta=75℃
100 Ta=25℃
10
1 Ta=-25℃
0.1
0 10 20 30 40 50 60 70 80 90
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
100
10
1
0
470 300 70
460
Ta=25℃
IF=0.2A
n=30pcs
250
Ta=25℃
VR=90V
n=30pcs
69
68
200 67
450 66
150 65
440 64
100
AVE:28.68uA
63
430
AVE:442.8mV
420
50
0
62
61
60
VF DISPERSION MAP
IR DISPERSION MAP
f=1MHz
10 20
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
Ct分布
30
Ta=25℃
f=1MHz
VR=0V
n=10pcs
AVE:64.35pF
Ct DISPERSION MAP
30 30
25
Ifsm 1cyc
25
20
8.3ms
20
15 15
Ta=25℃
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
30
25
20
15
Ifsm
8.3ms 8.3ms
1cyc
10 10 10
5
AVE:14.6A
0
IFSM DISRESION MAP
5
AVE:6.40ns
0
trr DISPERSION MAP
5
0
1 10 100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
30
25
20
15
10
5
0
1
Ifsm
t
1000
Mounted on epoxy board
IM=10mA
IF=0.1A
1ms time
300us
100
Rth(j-a)
Rth(j-c)
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
10
100 0.001
0.1 10
TIME:t(s)
1000
Rth-t CHARACTERISTICS
0.3
0.2
D=1/2
Sin(θ=180)
0.1
DC
0
0 0.1 0.2 0.3 0.4 0.5
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Io-Pf CHARACTERISTICS
Rev.B
2/3









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RB021VA-90 Даташит, Описание, Даташиты
Diodes
3
2
D=1/2
DC
1
Sin(θ=180)
0
0 20 40 60 80
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
RB021VA-90
0.5
0.4
DC
0.3 D=1/2
0.2
0A Io
0V
t
VR
D=t/T
VR=45V
T Tj=125℃
0.1 Sin(θ=180)
0
0 25 50 75 100 125
AMBIENT TEMPERATURE:Ta(℃)
Derating Curve゙(Io-Ta)
0.5
0.4
DC
0.3
D=1/2
0.2
0A Io
0V
t
VR
D=t/T
VR=45V
T Tj=125℃
0.1
Sin(θ=180)
0
0 25 50 75 100
CASE TEMPARATURE:Tc(℃)
Derating Curve゙(Io-Tc)
125
Rev.B
3/3










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Номер в каталогеОписаниеПроизводители
RB021VA-90Schottky Barrier DiodeROHM Semiconductor
ROHM Semiconductor

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