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RB021VAM90 PDF даташит

Спецификация RB021VAM90 изготовлена ​​​​«ROHM Semiconductor» и имеет функцию, называемую «Schottky Barrier Diode».

Детали детали

Номер произв RB021VAM90
Описание Schottky Barrier Diode
Производители ROHM Semiconductor
логотип ROHM Semiconductor логотип 

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RB021VAM90 Даташит, Описание, Даташиты
Schottky Barrier Diode
RB021VAM90
Data Sheet
lApplication
General rectification
lDimensions (Unit : mm)
1.4±0.1
0.8±0.05
0.17±0.04
0.6±0.1
lLand Size Figure (Unit : mm)
1.1
(1)
lFeatures
1) Small mold type (TUMD2M)
2) High reliability
3) Low VF
00.1
(2)
ROHM : TUMD2M
Manufacture date and factory
TUMD2M
lStructure (1)Cathode
lConstruction
Silicon epitaxial planar type
lTaping Dimensions (Unit : mm)
2.0±0.05
4.0±0.1
4.0±0.1
Φ
1.5
+0.1
-0
(2) Anode
0.25±0.05
1.53±0.03
Φ
+0.2
1.0 -0
0.9±0.08
lAbsolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive Peak Reverse Voltage
VRM
Duty0.5
90 V
Reverse Voltage
VR Direct Reverse Voltage
Average Forward Rectified Current
Non-repetitive Forward Current Surge Peak
Io
IFSM
Glass epoxy board mounted,
60Hz half sin Wave, resistive load, Tc=105°C Max.
60Hz half sin wave,
Non-repetitive at Ta=25°C, 1cycle
Operating Junction Temperature
Tj
-
90
0.2
5
125
V
A
A
°C
Storage Temperature
Tstg
- -55 to +125 °C
lElectrical Characteristics (Tj = 25°C)
Parameter
Symbol
Forward Voltage
VF
Reverse Current
IR
Conditions
IF=0.2A
VR=90V
Min. Typ. Max. Unit
- - 0.49 V
- - 900 mA
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
1/5
2014.11 - Rev.A









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RB021VAM90 Даташит, Описание, Даташиты
RB021VAM90
lElectrical Characteristic Curves
Data Sheet
1000
Tj = 125°C
Tj = 75°C
100
Tj = 25°C
10
Tj = -25°C
1
0 100 200 300 400 500 600 700
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
100000
10000
1000
Tj = 125°C
Tj = 75°C
100 Tj = 25°C
10
Tj = -25°C
1
0.1
0 10 20 30 40 50 60 70 80 90
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
100 480
Tj = 25°C
f = 1MHz
475
470
Tj=25°C
IF=0.2A
n=30pcs
465
460
10
455
450 Ave. : 442.8mV
445
440
1
0 5 10 15 20 25 30
435
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
VF DISPERSION MAP
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
2/5
2014.11 - Rev.A









No Preview Available !

RB021VAM90 Даташит, Описание, Даташиты
RB021VAM90
lElectrical Characteristic Curves
Data Sheet
100
90
Tj=25°C
VR=90V
80 n=30pcs
70
60
50 Ave. : 31.0mA
40
30
20
10
0
IR DISPERSION MAP
70
69 Tj=25°C
f=1MHz
68 VR=0V
n=10pcs
67
66
65 Ave. : 64.4pF
64
63
62
Ct DISPERSION MAP
40
35
IFSM 1cyc
30
8.3ms
Ta=25°C
25
20 Ave. : 16.9A
15
10
5
0
IFSM DISPERSION MAP
40
Tj=25°C
35 IF=0.5A
IR=1.0A
30 Irr / IR=0.25
n=10pcs
25
20
15
10 Ave. : 6.4ns
5
0
trr DISPERSION MAP
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
3/5
2014.11 - Rev.A










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Номер в каталогеОписаниеПроизводители
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