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RB058L-30 PDF даташит

Спецификация RB058L-30 изготовлена ​​​​«ROHM Semiconductor» и имеет функцию, называемую «Schottky Barrier Diode».

Детали детали

Номер произв RB058L-30
Описание Schottky Barrier Diode
Производители ROHM Semiconductor
логотип ROHM Semiconductor логотип 

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RB058L-30 Даташит, Описание, Даташиты
Schottky Barrier Diode
RB058L-30
Application
General rectification
Dimensions (Unit : mm)
2.6±0.15
Datasheet
Land Size Figure (Unit : mm)
2.0
Features
1) Small power mold type
(PMDS)
2) High reliability
3) Super low IR
12
1.5±0.2
0.1±0.02
2.0±0.2
ROHM : PMDS
JEDEC : SOD-106
1 2 : Manufacture Date
Construction
Taping Dimensions (Unit : mm)
Silicon epitaxial planar type
2.0±0.05
4.0±0.1
PMDS
Structure
φ1.55±0.05
Cathode
Anode
0.3
2.9±0.1
4.0±0.1
φ1.55
2.8MAX
Absolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
VRM
Duty0.5
30 V
Reverse voltage
VR Direct reverse voltage
Average forward rectified current
Non-repetitive forward current surge peak
Io
IFSM
Glass epoxy board mounted, 60Hz half sin wave,
resistive load , Tc=90ºC Max.
60Hz half sin wave, one cycle,
non-repetitive at Ta=25ºC
Operating junction temperature
Tj
-
30
3
90
150
V
A
A
°C
Storage temperature
Tstg
- 55 to 150 °C
Electrical Characteristics (Tj= 25°C)
Parameter
Symbol
Forward voltage
Reverse current
VF
IR
Conditions
IF=3.0A
VR=30V
Min. Typ. Max. Unit
- - 0.68 V
- - 2.5 A
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/5
2016.11 - Rev.C









No Preview Available !

RB058L-30 Даташит, Описание, Даташиты
RB058L-30
Electrical Characteristic Curves
Data Sheet
100
Tj = 150°C
10
1
0.1
0.01
Tj = 125°C
Tj = 75°C
Tj = 25°C
Tj = 25°C
0.001
0
200 400 600 800 1000
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
10000
1000
Tj = 150°C
100
Tj = 125°C
10
1
0.1
0.01
Tj = 75°C
Tj = 25°C
0.001
0.0001
0.00001
0
Tj = 25°C
10 20 30
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
1000
Tj = 25°C
f = 1MHz
620
610
600
Tj=25°C
IF=3A
n=30pcs
590
580 Ave. : 563mV
100 570
560
550
540
530
10
0
520
10 20 30
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
VF DISPERSION MAP
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
2/5
2016.11 - Rev.C









No Preview Available !

RB058L-30 Даташит, Описание, Даташиты
RB058L-30
Electrical Characteristic Curves
Data Sheet
220
200 Tj=25°C
180
VR=30V
n=30pcs
160
140 Ave. : 117nA
120
100
80
60
40
20
0
IR DISPERSION MAP
800
780 Tj=25°C
f=1MHz
760 VR=0V
740 n=10pcs
720
700
680
660 Ave. : 631pF
640
620
600
Ct DISPERSION MAP
500
400
IFSM 1cyc
8.3ms
Ta=25°C
300
Ave. : 191A
200
100
IFSM DISPERSION MAP
40
Tj=25°C
35 IF=0.5A
30
IR=1.0A
Irr / IR=0.25
n=10pcs
25
20 Ave. : 13.9ns
15
10
5
0
trr DISPERSION MAP
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
3/5
2016.11 - Rev.C










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Номер в каталогеОписаниеПроизводители
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ROHM Semiconductor

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