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RB068MM-40 PDF даташит

Спецификация RB068MM-40 изготовлена ​​​​«ROHM Semiconductor» и имеет функцию, называемую «Schottky Barrier Diode».

Детали детали

Номер произв RB068MM-40
Описание Schottky Barrier Diode
Производители ROHM Semiconductor
логотип ROHM Semiconductor логотип 

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RB068MM-40 Даташит, Описание, Даташиты
Schottky Barrier Diode
RB068MM-40
Application
General rectification
Dimensions (Unit : mm)
1.6±0.1
0.1±00..015
Datasheet
Land Size Figure (Unit : mm)
1.2
Features
1) Small power mold type
(PMDU)
2) High reliability
3) Super low IR
Construction
Silicon epitaxial planar type
PMDU
0.9±0.1
ROHM : PMDU
JEDEC : SOD-123FL
: Manufacture Date
0.8±0.1
Taping Dimensions (Unit : mm)
4.0±0.1 2.0±0.05
φ11..5555±00.0.055
Structure Cathode
Anode
0.25±0.05
1.81±0.1
4.0±0.1
φ11.0.0±0.01.1
1.5MAX
Absolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive Peak Reverse Voltage
Reverse Voltage
Average Forward Rectified Current
Non-repetitive Forward Current Surge Peak
Operating Junction Temperature
Storage Temperature
VRM
VR
Io
IFSM
Tj
Tstg
Duty0.5
40 V
Direct Reverse Voltage
40 V
Glass epoxi mounted, 60Hz half sin Wave
resistive load, Tc=80°C max.
60Hz half sin wave,
Non-repetitive at Ta=25°C,1cycle
-
2
40
150
A
A
°C
- 55 to 150 °C
Electrical Characteristics (Tj = 25°C)
Parameter
Symbol
Forward Voltage
VF
Reverse Current
IR
Conditions
IF=2.0A
VR=40V
Min. Typ. Max. Unit
- 0.675 0.725 V
- 0.05 0.55 A
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/5
2016.11 - Rev.C









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RB068MM-40 Даташит, Описание, Даташиты
RB068MM-40
Electrical Characteristic Curves
Data Sheet
10
Tj = 150°C
Tj = 125°C
1
0.1 Tj = 75°C
0.01
Tj = 25°C
Tj = 25°C
0.001
0 100 200 300 400 500 600 700 800 9001000
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
1000
100
Tj = 150°C
10
Tj = 125°C
1
0.1
0.01
0.001
Tj = 75°C
Tj = 25°C
Tj = 25°C
0.0001
0
10 20 30
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
40
1000
Tj = 25°C
f = 1MHz
675
670
665
Tj=25°C
IF=2.0A
n=30pcs
660
100 655
Ave. : 645mV
650
645
640
10
0
5 10 15 20 25 30
635
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
VF DISPERSION MAP
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
2/5
2016.11 - Rev.C









No Preview Available !

RB068MM-40 Даташит, Описание, Даташиты
RB068MM-40
Electrical Characteristic Curves
Data Sheet
110
100
Tj=25°C
VR=40V
90 n=30pcs
80
70
60 Ave. : 38.7nA
50
40
30
20
IR DISPERSION MAP
320
310 Tj=25°C
f=1MHz
300 VR=0V
n=10pcs
290
280
270
260 Ave. : 245pF
250
240
230
Ct DISPERSION MAP
260
240
220
IFSM 1cyc
200
180
8.3ms
Ta=25°C
160
140
120 Ave. : 82A
100
80
60
IFSM DISPERSION MAP
40
Tj=25°C
35 IF=0.5A
30
IR=1.0A
Irr / IR=0.25
n=10pcs
25
20
15 Ave. : 8ns
10
5
0
trr DISPERSION MAP
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
3/5
2016.11 - Rev.C










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Номер в каталогеОписаниеПроизводители
RB068MM-40Schottky Barrier DiodeROHM Semiconductor
ROHM Semiconductor

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