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RB085BM-30 PDF даташит

Спецификация RB085BM-30 изготовлена ​​​​«ROHM Semiconductor» и имеет функцию, называемую «Schottky Barrier Diode».

Детали детали

Номер произв RB085BM-30
Описание Schottky Barrier Diode
Производители ROHM Semiconductor
логотип ROHM Semiconductor логотип 

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RB085BM-30 Даташит, Описание, Даташиты
Schottky Barrier Diode
RB085BM-30
lApplication
General Rectification
lDimensions (Unit : mm)
Data Sheet
lLand size figure (Unit : mm)
6.0
lFeatures
1) Power mold type (TO-252)
2) Cathode common dual type
3) High reliability
4) Low VF
lConstruction
Silicon epitaxial planar type
1
ROHM : TO-252
JEITA : SC-63
1 : Manufacture Date
lTaping specifications (Unit : mm)
1.6 1.6
TO-252
2.3 2.3
lStructure
(2)
Cathode
(1) (3)
Anode Anode
lAbsolute maximum ratings (Tc= 25°C)
Parameter
Symbol
Limits
Unit
Conditions
Repetitive Peak Reverse Voltage
VRM 35 V Duty0.5
Reverse Voltage
Average forward rectified current
Non-repetitive Forward Current Surge Peak
Operating Junction Temperature
VR
Io
IFSM
Tj
30 V Direct Reverse Voltage
10
A
60Hz half sin Wave resistive load,
Tc=102°C max., 1/2 Io per diode
50
A
60Hz half sin wave,
Non-repetitive at Ta=25ºC, per diode
150 °C
-
Storage Temperature
Tstg -40 to +150 °C
-
lElectrical characteristics (Tj = 25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Forward voltage
Reverse current
VF - - 0.48 V IF=4.0A
IR - - 0.3 mA VR=30V
Thermal Resistance
Rth(j-c)
-
- 6.0 °C / W Junction to Case
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
1/5
2014.10 - Rev.A









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RB085BM-30 Даташит, Описание, Даташиты
RB085BM-30
lElectrical characteristic curves
Data Sheet
10
Tj = 125°C
Tj = 150°C
1
0.1
Tj = 75°C
Tj = 25°C
Tj = -25°C
0.01
0
100 200 300 400 500 600
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
100000
10000
1000
100
Tj = 150°C
Tj = 125°C
Tj = 75°C
10
Tj = 25°C
1
0.1 Tj = -25°C
0.01
0
10 20
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
30
10000
f = 1MHz
500
490
480
470
Tj=25°C
IF=4A
n=30pcs
460
1000
450 AVE : 461.3mV
440
430
420
410
100
0
400
10 20 30
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
VF DISPERSION MAP
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
2/5
2014.10 - Rev.A









No Preview Available !

RB085BM-30 Даташит, Описание, Даташиты
RB085BM-30
lElectrical characteristic curves
Data Sheet
120
110 AVE : 47.6nA
100
90
Tj=25°C
TVnVjR===R23=05030°p0VCcVs
n=30pcs
80
70
60
AVE : 41.5mA
50
40
30
20
IR DISPERSION MAP
1800
1750
1700
1650
1600
1550
AVE : 000pF
TTj=j=2255°°CC
f=f=11MMHHzz
VVRR==00VV
nn==1100ppccss
AVE : 1617pF
Ct DISPERSION MAP
300
250
200
IFSM 8.3ms
1cyc.
150 AVE : 130A
100
50
0
IFSM DISPERSION MAP
45
TTjj==2255°°CC
40
35
30
IrrnIIIIRFRF=/I=R===1II0=Rr0000r=.1...1p51/10A*cAAA.Is2R5
n=10pcs
25 AVE : 19.3ns
20 AVE : 00ns
15
10
5
0
trr DISPERSION MAP
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
3/5
2014.10 - Rev.A










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