RB085BM-40 PDF даташит
Спецификация RB085BM-40 изготовлена «ROHM Semiconductor» и имеет функцию, называемую «Schottky Barrier Diode». |
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Детали детали
Номер произв | RB085BM-40 |
Описание | Schottky Barrier Diode |
Производители | ROHM Semiconductor |
логотип |
9 Pages
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Schottky Barrier Diode
RB085BM-40
lApplication
General Rectification
lDimensions (Unit : mm)
Data Sheet
lLand size figure (Unit : mm)
6.0
lFeatures
1) Power mold type (TO-252)
2) Cathode common dual type
12
3) High reliability
4) Low VF
lConstruction
Silicon epitaxial planar type
ROHM : TO-252
JEITA : SC-63
1 : Manufacture Date
2 : Serial number
lTaping specifications (Unit : mm)
1.6 1.6
TO-252
2.3 2.3
lStructure
(2)
Cathode
(1) (3)
Anode Anode
lAbsolute maximum ratings (Tc= 25°C)
Parameter
Symbol
Limits
Unit
Conditions
Repetitive Peak Reverse Voltage
VRM 45 V Duty≦0.5
Reverse Voltage
Average forward rectified current
Non-repetitive Forward Current Surge Peak
Operating Junction Temperature
VR
Io
IFSM
Tj
40 V Direct Reverse Voltage
10
A
60Hz half sin Wave resistive load,
Tc=102°C max., 1/2 Io per diode
50
A
60Hz half sin wave,
Non-repetitive at Ta=25ºC, per diode
150 °C
-
Storage Temperature
Tstg -40 to +150 °C
-
lElectrical characteristics (Tj = 25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Forward voltage
Reverse current
VF - - 0.55 V IF=5.0A
IR - - 0.2 mA VR=40V
Thermal Resistance
Rth(j-c)
-
- 6.0 °C / W Junction to Case
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
1/5
2016.04 - Rev.B
No Preview Available ! |
RB085BM-40
lElectrical characteristic curves
Data Sheet
10
Tj = 125°C
Tj = 150°C
1
0.1
Tj = 75°C
Tj = 25°C
Tj = -25°C
0.01
0 100 200 300 400 500 600 700
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
100000
10000
1000
100
10
1
Tj = 150°C
Tj = 125°C
Tj = 75°C
Tj = 25°C
0.1
0.01
0
Tj = -25°C
10 20 30
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
40
1000
f = 1MHz
570
560
550
Tj=25°C
IF=5A
n=30pcs
540
530
100
520
510 AVE : 494.3mV
500
490
10
0
480
10 20 30
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
VF DISPERSION MAP
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
2/5
2016.04 - Rev.B
No Preview Available ! |
RB085BM-40
lElectrical characteristic curves
Data Sheet
100
Tj=25°C
90 VR=40V
80 n=30pcs
70
60
50
40 AVE : 31.2mA
30
20
10
IR DISPERSION MAP
770
765 Tj=25°C
f=1MHz
760 VR=0V
755 n=10pcs
750
745
740
735 AVE : 728pF
730
725
720
Ct DISPERSION MAP
400
350
300
250
IFSM 8.3ms
1cyc.
200
AVE : 128A
150
100
50
0
IFSM DISPERSION MAP
50
Tj=25°C
IF=0.5A
40 IR=1A
Irr / IR=0.25
n=10pcs
30
20 AVE : 12.3ns
10
0
trr DISPERSION MAP
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
3/5
2016.04 - Rev.B
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Номер в каталоге | Описание | Производители |
RB085BM-40 | Schottky Barrier Diode | ROHM Semiconductor |
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