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RBS2MM40C PDF даташит

Спецификация RBS2MM40C изготовлена ​​​​«ROHM Semiconductor» и имеет функцию, называемую «Schottky Barrier Diode».

Детали детали

Номер произв RBS2MM40C
Описание Schottky Barrier Diode
Производители ROHM Semiconductor
логотип ROHM Semiconductor логотип 

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RBS2MM40C Даташит, Описание, Даташиты
Schottky Barrier Diode
RBS2MM40C
lApplications
General rectification
lDimensions (Unit : mm)
1.6±0.1
0.1±00..015
Data Sheet
lLand Size Figure (Unit : mm)
1.2
lFeatures
1) Small power mold type
(PMDU)
2) High reliability
3) Super low VF
lConstruction
Silicon epitaxial planar type
0.9±0.1
0.8±0.1
ROHM : PMDU
JEDEC : SOD-123FL
: Manufacture Date
PMDU
(1)Cathode
lStructure
lTaping Dimensions (Unit : mm)
4.0±0.1 2.0±0.05
φf 1.55±0.05
(2)Anode
0.25±0.05
1.81±0.1
4.0±0.1
φf 1.0±0.1
1.5MAX
lAbsolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
VRM
Duty0.5
40 V
Reverse voltage
VR Direct reverse voltage
Average forward rectified current
Non-repetitive forward current surge peak
Io
IFSM
Glass epoxy board mounted, 60Hz half sin wave,
resistive load , Tc=90ºC Max.
60Hz half sin wave, non-repetitive at
Ta=25ºC, 1cycle
Operating junction temperature (1)
Tj
-
20
2.0
45
125
V
A
A
°C
Storage temperature
Tstg
- -55 to +125 °C
Note (1) To avoid occurrence of thermal runaway, actual board is to be designed to fulfill dPd/dTj < 1/Rth(j-a).
lElectrical Characteristics (Tj= 25°C)
Parameter
Symbol
Forward voltage
Reverse current
VF
IR
Conditions
IF=2.0A
VR=20V
Min. Typ. Max. Unit
- 0.35 0.39 V
- 300 600 mA
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
1/4
2016.05 - Rev.B









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RBS2MM40C Даташит, Описание, Даташиты
RBS2MM40C
lElectrical Characteristic Curves
Data Sheet
20
10
1
Tj = 125°C
0.1
0.01
Tj = 75°C
Tj = 25°C
0.001
Tj = -25°C
0.0001
0
200 400 600 800 1000 1200
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
1000000
100000
10000
1000
Tj = 125°C
Tj = 75°C
Tj = 25°C
100 Tj = -25°C
10
1
0 5 10 15 20 25 30 35 40
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
1.4
Tj = 125°C
1.2 D = 1/2
1.0
Sin(θ=180)
0.8
0.6 DC
0.4
0.2
0.0
0.0
0.5 1.0 1.5 2.0 2.5 3.0
AVERAGE RECTIFIED
FORWARD CURRENT : Io (A)
Io-PF CHARACTERISTICS
3.5
10
9
8
7
6
5
4
3
2
1
0
0
Tj = 125°C
Sin(θ=180)
D = 1/2
DC
5 10 15 20 25 30 35 40
REVERSE VOLTAGE : VR (V)
VR-PR CHARACTERISTICS
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
2/4
2016.05 - Rev.B









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RBS2MM40C Даташит, Описание, Даташиты
RBS2MM40C
lElectrical Characteristic Curves
Data Sheet
5.0
4.0
DC
3.0
D = 1/2
Glass epoxy board mounted
IO
0A
0V
VR t
T
D=t/T
VR=10V
Tj=125°C
2.0
Sin(θ=180)
1.0
0.0
0 25 50 75 100
CASE TEMPERATURE : Tc (°C)
DERATING CURVE (Io-Tc)
125
1000
100
Tj = 25°C
f = 1MHz
10
0
5 10 15 20 25
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
30
1000
100
IFSM
8.3 8.3
ms ms
1cyc
Ta=25°C
1000
100
IFSM
time
1cyc
Ta=25°C
10
1
10 100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
10
1
10
TIME : t (ms)
IFSM-t CHARACTERISTICS
100
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
3/4
2016.05 - Rev.B










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