EMB32N03JS PDF даташит
Спецификация EMB32N03JS изготовлена «Excelliance MOS» и имеет функцию, называемую «Field Effect Transistor». |
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Детали детали
Номер произв | EMB32N03JS |
Описание | Field Effect Transistor |
Производители | Excelliance MOS |
логотип |
5 Pages
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N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
D
RDSON (MAX.)
35mΩ
ID 5A
G
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
Power Dissipation
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
IDM
PD
Tj, Tstg
TYPICAL
Junction‐to‐Ambient3
RJA (T ≤ 10sec)
RJA (Steady State)
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
3The device mounted on a 1 in2 pad of 2 oz copper.
2015/10/19
EMB32N03JS
LIMITS
±20
5
3.3
20
1.04
0.66
‐55 to 150
UNIT
V
A
W
°C
MAXIMUM
83
120
UNIT
°C / W
p.1
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ELECTRICAL CHARACTERISTICS (TA = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
EMB32N03JS
LIMITS
UNIT
MIN TYP MAX
STATIC
Drain‐Source Breakdown Voltage
Gate Threshold Voltage
Gate‐Body Leakage
Zero Gate Voltage Drain Current
On‐State Drain Current1
Drain‐Source On‐State Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(ON)
RDS(ON)
gfs
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
VDS = 0V, VGS = ±20V
VDS = 24V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 125 °C
VDS = 5V, VGS = 10V
VGS = 10V, ID = 5A
VGS = 4.5V, ID = 4A
VDS = 5V, ID = 5A
DYNAMIC
30
V
1.0 1.5 3.0
±100 nA
1 A
10
5
A
30 35
mΩ
40 50
11 S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge1,2
Gate‐Source Charge1,2
Gate‐Drain Charge1,2
Turn‐On Delay Time1,2
Rise Time1,2
Turn‐Off Delay Time1,2
Fall Time1,2
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 10V, f = 1MHz
VDS = 10V, VGS = 10V,
ID = 5A
VDS = 15V,
ID = 1A, VGS = 10V, RGS = 6Ω
323
75
pF
53
7.1
1.1 nC
2.2
8
12
28
nS
15
SOURCE‐DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)
Continuous Current
Pulsed Current3
Forward Voltage1
IS
ISM
VSD
1Pulse test : Pulse Width 300 sec, Duty Cycle 2%.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
IF = IS, VGS = 0V
2
A
8
1.2 V
2015/10/19
p.2
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TYPICAL CHARACTERISTICS
24
On‐Region Characteristics
VG S = 10V 6V
7V
20
5V
16
12
8
4
0
0
4.5V
12
3
VD S ‐ Drain‐Source Voltage( V )
4
5
On‐Resistance Variation with Temperature
1.9
I D = 5A
VG S = 10V
1.6
1.3
1.0
0.7
0.4
‐50 ‐25
0 25
50 75 100 125 150
T J ‐ Junction Temperature (°C)
6
Transfer Characteristics
VD S = 10V
5
4
T A = ‐55°C
25°C
3
2
125°C
1
0
1 1.5
2.0
2.5 3.0
3.5
VG S ‐ Gate‐Source Voltage( V )
2015/10/19
EMB32N03JS
On‐Resistance Variation with Drain Current and Gate Voltage
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0
V G S = 4.5 V
5.0 V
6.0 V
7.0 V
10 V
5 10 15
I D ‐ Drain Current( A )
20
25
On‐Resistance Variation with Gate‐Source Voltage
0.09
0.08 I D = 2.5 A
0.07
0.06
0.05
0.04
0.03
0.02
0.01
2
T A = 125°C
T A = 25°C
46
8
VG S ‐ Gate‐Source Voltage( V )
10
Body Diode Forward Voltage Variation
100 with Source Current and Temperature
VG S = 0V
10
1
0.1
T A = 125°C 25°C
‐55°C
0.01
0.001
0
0.2 0.4
0.6 0.8 1.0 1.2 1.4
VS D ‐ Body Diode Forward Voltage( V )
p.3
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Номер в каталоге | Описание | Производители |
EMB32N03J | Field Effect Transistor | Excelliance MOS |
EMB32N03JS | Field Effect Transistor | Excelliance MOS |
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