EMD16N08H Datasheet PDF - Excelliance MOS
| Part Number | EMD16N08H | |
| Description | Field Effect Transistor | |
| Manufacturers | Excelliance MOS | |
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There is a preview and EMD16N08H download ( pdf file ) link at the bottom of this page. Total 6 Pages | ||
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N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
80V
D
RDSON (MAX.)
12.8mΩ
ID 47A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1,3
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=30A, RG=25Ω
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
3Pulsed drain current rating is package limited.
EMD16N08H
LIMITS
±30
47
27
150
30
45
22.5
50
20
‐55 to 150
UNIT
V
A
mJ
W
°C
MAXIMUM
2.5
75
UNIT
°C / W
2015/9/23
p.1
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EMD16N08H
10
Gate Charge Characteristics
I D = 20A
8
VD S = 20V 40V
2000
1500
Ciss
Capacitance Characteristics
f = 1MHz
VG S = 0 V
6
4
2
1000
Coss
500
0
0
7 14 21
Q g ‐ Gate Charge( nC )
28
103
Maximum Safe Operating Area
102 RDS(ON) Limited
10μs
100μs
101
1ms
10ms
DC
100
TC=25°C
RθJC=2.5°C/W
Vgs=10V
Single Pulse
10‐1
100
101 102
VDS, Drain‐Source Voltage( V )
0
0
3000
2500
Crss
20 40 60
VD S ‐ Drain‐Source Voltage( V )
80
SINGLE PULSE MAXIMUM POWER DISSIPATION
SRθI N JC G= L2E. 5P° UC/LWSE
TC = 25° C
2000
1500
1000
500
0
0.01
0.1 1 10 100
SINGLE PULSE TIME ( mSEC )
1000
1
Duty Cycle = 0.5
0.5
Transient Therm al Response Curve
0.3
0.2 0.2
0.1 0.1
0.05
0.05
0.02
0.03
0.01
0.02
Single Pulse
0.01
10‐2
1 0‐1
1 10
t 1 ,Tim e ( m SEC )
Notes:
DM
1 .D u ty C y cle ,D =
t1
t2
2 .Rθ J C = 2 .5 °C /W
3 .TJ ‐ T C = P * R θ J C (t)
4 .Rθ J C (t)= r(t) * RθJC
100
1000
2015/9/23
p.5
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for EMD16N08H electronic component. |
| Information | Total 6 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ EMD16N08H.PDF Datasheet ] | |
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| Part Number | Description | MFRS |
| EMD16N08H | The function is Field Effect Transistor. Excelliance MOS | |
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