EMB05N03HR PDF даташит
Спецификация EMB05N03HR изготовлена «Excelliance MOS» и имеет функцию, называемую «Field Effect Transistor». |
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Детали детали
Номер произв | EMB05N03HR |
Описание | Field Effect Transistor |
Производители | Excelliance MOS |
логотип |
6 Pages
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N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
D
RDSON (MAX.)
5.0mΩ
ID 75A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
EMB05N03HR
LIMITS
UNIT
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
L = 0.1mH, ID=53A, RG=25Ω
Repetitive Avalanche Energy2
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
±20
75
45
160
53
140
40
50
26
‐55 to 150
V
A
mJ
W
°C
100% UIS testing in condition of VD=15V, L=0.1mH, VG=10V, IL=30A, Rated VDS=30V N‐CH
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNIT
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
350°C / W when mounted on a 1 in2 pad of 2 oz copper.
2.5
°C / W
50
2015/11/2
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ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
EMB05N03HR
LIMITS
UNIT
MIN TYP MAX
STATIC
Drain‐Source Breakdown Voltage
Gate Threshold Voltage
Gate‐Body Leakage
Zero Gate Voltage Drain Current
On‐State Drain Current1
Drain‐Source On‐State Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(ON)
RDS(ON)
gfs
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
VDS = 0V, VGS = ±20V
VDS = 24V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 125 °C
VDS = 10V, VGS = 10V
VGS = 10V, ID = 30A
VGS = 4.5V, ID = 24A
VDS = 5V, ID = 24A
DYNAMIC
30
V
1 1.7 3
±100 nA
1 A
25
75
A
4.4 5.0
mΩ
5.1 6.5
25 S
Input Capacitance
Output Capacitance
Ciss
Coss
VGS = 0V, VDS = 15V, f = 1MHz
Reverse Transfer Capacitance
Crss
Gate Resistance
Total Gate Charge1,2
Gate‐Source Charge1,2
Gate‐Drain Charge1,2
Turn‐On Delay Time1,2
Rise Time1,2
Turn‐Off Delay Time1,2
Fall Time1,2
Rg
Qg(VGS=10V)
Qg(VGS=4.5V)
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 15mV, VDS = 0V, f = 1MHz
VDS = 15V, VGS = 10V,
ID = 30A
VDS = 15V,
ID = 24A, VGS = 10V, RGS = 2.7Ω
SOURCE‐DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)
Continuous Current
Pulsed Current3
Forward Voltage1
IS
ISM
VSD
IF = IS, VGS = 0V
Reverse Recovery Time
trr
Peak Reverse Recovery Current
IRM(REC)
IF = IS, dlF/dt = 100A / S
Reverse Recovery Charge
Qrr
1Pulse test : Pulse Width 300 sec, Duty Cycle 2%.
1428
234
122
2.3
26.9
12.8
3.6
4.8
15
18
45
20
75
150
1.3
30
200
12
pF
Ω
nC
nS
A
V
nS
A
nC
2015/11/2
p.2
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2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
Ordering & Marking Information:
Device Name: EMB05N03HR for EDFN 5 x 6
B05
N03R
ABCDEFG
B05N03R: Device Name
ABCDEFG: Date Code
2015/11/2
EMB05N03HR
p.3
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Номер в каталоге | Описание | Производители |
EMB05N03HR | Field Effect Transistor | Excelliance MOS |
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