EMP21N03HC PDF даташит
Спецификация EMP21N03HC изготовлена «Excelliance MOS» и имеет функцию, называемую «Field Effect Transistor». |
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Детали детали
Номер произв | EMP21N03HC |
Описание | Field Effect Transistor |
Производители | Excelliance MOS |
логотип |
6 Pages
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N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
D
RDSON (MAX.)
2.1mΩ
ID
100A
G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
EMP21N03HC
LIMITS
UNIT
Gate‐Source Voltage
Continuous Drain Current1
Pulsed Drain Current2
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
L = 0.1mH, ID=65A, RG=25Ω
Repetitive Avalanche Energy3
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
±20
100
75
400
65
211
105
50
20
‐55 to 150
V
A
mJ
W
°C
100% UIS testing in condition of VD=15V, L=0.1mH, VG=10V, IL=40A, Rated VDS=30V N‐CH
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNIT
Junction‐to‐Case
RJC
Junction‐to‐Ambient4
RJA
1Package Limited.
2Pulse width limited by maximum junction temperature.
3Duty cycle 1%
450°C / W when mounted on a 1 in2 pad of 2 oz copper.
2.5
°C / W
50
2016/3/9
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ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
EMP21N03HC
LIMITS
UNIT
MIN TYP MAX
STATIC
Drain‐Source Breakdown Voltage
Gate Threshold Voltage
Gate‐Body Leakage
Zero Gate Voltage Drain Current
On‐State Drain Current1
Drain‐Source On‐State Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(ON)
RDS(ON)
gfs
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
VDS = 0V, VGS = ±20V
VDS = 24V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 125 °C
VDS = 10V, VGS = 10V
VGS = 10V, ID = 25A
VGS = 4.5V, ID = 15A
VDS = 5V, ID = 25A
DYNAMIC
30
1 1.5
100
1.8
2.7
70
3
±100
1
25
2.1
3.3
V
nA
A
A
mΩ
S
Input Capacitance
Output Capacitance
Ciss
Coss
VGS = 0V, VDS = 15V, f = 1MHz
Reverse Transfer Capacitance
Crss
Gate Resistance
Total Gate Charge1,2
Gate‐Source Charge1,2
Gate‐Drain Charge1,2
Turn‐On Delay Time1,2
Rise Time1,2
Turn‐Off Delay Time1,2
Fall Time1,2
Rg
Qg(VGS=10V)
Qg(VGS=4.5V)
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 15mV, VDS = 0V, f = 1MHz
VDS = 15V, VGS = 10V,
ID = 25A
VDS = 15V,
ID = 1A, VGS = 10V, RGS = 2.7Ω
Continuous Current4
Pulsed Current3
Forward Voltage1
SOURCE‐DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)
IS
ISM
VSD
IF = 30A, VGS = 0V
Reverse Recovery Time
trr
Peak Reverse Recovery Current
IRM(REC)
IF = IS, dlF/dt = 100A / S
Reverse Recovery Charge
Qrr
3813
540
440
1.5
59
28
13
11
25
16
60
25
100
400
1.2
35
200
25
pF
Ω
nC
nS
A
V
nS
A
nC
2016/3/9
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1Pulse test : Pulse Width 300 sec, Duty Cycle 2%.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
4Package Limited.
Ordering & Marking Information:
Device Name: EMP21N03HC for EDFN 5 x 6
P21
N03
ABCDEFG
P21N03: Device Name
ABCDEFG: Date Code
2016/3/9
EMP21N03HC
p.3
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Номер в каталоге | Описание | Производители |
EMP21N03HC | Field Effect Transistor | Excelliance MOS |
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