(PDF) EMB40A03K Datasheet - Field Effect Transistor

Número de pieza	EMB40A03K
Descripción	Field Effect Transistor
Fabricantes	Excelliance MOS
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No Preview Available ! Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D1 D2 RDSON (MAX.) ID 40mΩ 4.5A G1 G2 S1 S2 Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C Power Dissipation TA = 25 °C TA = 70 °C Operating Junction & Storage Temperature Range THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL VGS ID IDM PD Tj, Tstg TYPICAL Junction‐to‐Ambient RJA 1Pulse width limited by maximum junction temperature. 2Duty cycle  1％ 2012/7/24 EMB40A03K LIMITS ±20 4.5 3 18 1.25 0.83 ‐55 to 150 UNIT V A W °C MAXIMUM 100 UNIT °C / W p.1 1 page Ordering & Marking Information: Device Name: EMB40A03K for TSOP‐6 45ABC #1 45: Device Code, 45 for EMB40A03K ABC: Date Code Outline Drawing B1 B e D AF b A1 Dimension in mm C G Dimension A A1 B B1 b C D e F G Min. 0.85 0 2.50 1.50 0.30 0.08 2.70 0.85 0.20 Typ. 0.95 2.80 1.60 0.40 2.90 0.95 Max. 1.25 0.15 3.10 1.70 0.50 0.20 3.10 1.40 0.60 Footprint 2012/7/24 EMB40A03K p.5 5 Page

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PDF EMB40A03K Data sheet ( Hoja de datos )