EMB02Q03HP PDF даташит
Спецификация EMB02Q03HP изготовлена «Excelliance MOS» и имеет функцию, называемую «Field Effect Transistor». |
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Детали детали
Номер произв | EMB02Q03HP |
Описание | Field Effect Transistor |
Производители | Excelliance MOS |
логотип |
10 Pages
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N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
N‐CH‐Q1 N‐CH‐Q2
BVDSS 30V 30V
RDSON (MAX.) 5.0mΩ 2.0mΩ
ID 53A 95A
UIS, Rg 100% Tested
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current3
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Continuous Drain Current3
Avalanche Current
TA = 25 °C
TA = 70 °C
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, RG=25Ω
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Power Dissipation
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
2016/4/28
VGS
ID
IDM
ID
IAS
EAS
EAR
PD
PD
Tj, Tstg
EMB02Q03HP
LIMITS
Q1 Q2
±20 ±20
53 95
33 60
130 170
21 37
17 30
30 65
45 211
22 105
25 31
10 12.5
1.8 1.9
1.1 1.2
‐55 to 150
UNIT
V
A
mJ
W
W
°C
p.1
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THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction‐to‐Case
RJC Steady State
Junction‐to‐Ambient
RJA Steady State
RJA t ≦ 10 s
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
3Package limitation current, Q1=30A, Q2=36A
RJA when mounted on a 1 in2 pad of 2 oz copper.
TYPICAL
EMB02Q03HP
MAXIMUM
5 4
70 65
30 25
UNIT
°C / W
2016/4/28
p.2
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ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
EMB02Q03HP
LIMITS
UNIT
MIN TYP MAX
STATIC
Drain‐Source Breakdown Voltage
V(BR)DSS
VGS = 0V, ID = 250A
Q1 30
Q2 30
V
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250A
Q1 1 1.5 3
Q2 1 1.5 3
Gate‐Body Leakage
IGSS
VDS = 0V, VGS = ±20V
Q1
±100 nA
Q2
±100
Zero Gate Voltage Drain Current
IDSS
VDS = 24V, VGS = 0V
Q1 1 A
Q2 1
On‐State Drain Current1
Drain‐Source On‐State Resistance1
Forward Transconductance1
ID(ON)
RDS(ON)
gfs
VDS = 20V, VGS = 0V, TJ = 125 °C
VDS = 10V, VGS = 10V
VGS = 10V, ID = 16A
VGS = 10V, ID = 25A
VGS = 4.5V, ID = 10A
VGS = 4.5V, ID = 15A
VDS = 5V, ID = 16A
VDS = 5V, ID = 25A
DYNAMIC
Q1
Q2
Q1 53
Q2 95
Q1
Q2
Q1
Q2
Q1
Q2
4.0
1.6
6.0
2.3
50
70
25
25
A
5.0
mΩ
2.0
7.8
3.0
S
Input Capacitance
Ciss Q1 1508
VGS = 0V, VDS = 15V, f = 1MHz Q2 3813
pF
Output Capacitance
Coss
Q1
Q2
219
540
Reverse Transfer Capacitance
Crss
Q1
Q2
167
440
Gate Resistance
Total Gate Charge1,2
Rg VGS = 15mV, VDS = 0V, f = 1MHz Q1 0.9 Ω
Q2 1.5
Qg(VGS=10V)
Qg(VGS=4.5V)
Q1
VDD = 15V, VGS = 10V,
ID = 16A
Q1
Q2
Q1
Q2
25
59
13
28
nC
2016/4/28
p.3
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Номер в каталоге | Описание | Производители |
EMB02Q03HP | Field Effect Transistor | Excelliance MOS |
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