EMB21C03S PDF даташит
Спецификация EMB21C03S изготовлена «Excelliance MOS» и имеет функцию, называемую «Field Effect Transistor». |
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Детали детали
Номер произв | EMB21C03S |
Описание | Field Effect Transistor |
Производители | Excelliance MOS |
логотип |
8 Pages
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N & P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
N‐CH P‐CH
BVDSS
RDSON (MAX.)
30V ‐30V
21mΩ 35mΩ
ID
7.5A
‐6A
UIS, Rg 100% Tested
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
EMB21C03S
LIMITS
UNIT
Gate‐Source Voltage
VGS
N‐CH
P‐CH
V
±20 ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
L = 0.1mH, ID=7.5A, RG=25Ω(N)
L = 0.1mH, ID=‐6A, RG=25Ω(P)
Repetitive Avalanche Energy2
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
7.5 ‐6
5.5 ‐5
30 ‐24
10 ‐10
2.8 1.8
1.4 0.9
5
2
‐55 to 150
A
mJ
W
°C
100% UIS testing in condition of VD=15V, L=0.1mH, VG=10V, IL=7.5A, Rated VDS=30V N‐CH
100% UIS testing in condition of VD=15V, L=0.1mH, VG=‐10V, IL=‐6A, Rated VDS=‐30V P‐CH
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNIT
Junction‐to‐Case
Junction‐to‐Ambient3
2012/10/25
RJC
RJA
25
62.5
°C / W
p.1
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1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
362.5°C / W when mounted on a 1 in2 pad of 2 oz copper.
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
EMB21C03S
LIMITS
UNIT
MIN TYP MAX
STATIC
Drain‐Source Breakdown Voltage
Gate Threshold Voltage
Gate‐Body Leakage
Zero Gate Voltage Drain Current
On‐State Drain Current1
Drain‐Source On‐State Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(ON)
RDS(ON)
gfs
VGS = 0V, ID = 250A
N‐CH 30
V
VGS = 0V, ID = ‐250A
P‐CH ‐30
VDS = VGS, ID = 250A
N‐CH 1 1.5 3
VDS = VGS, ID = ‐250A
P‐CH ‐1 ‐1.5 ‐3
VDS = 0V, VGS = ±20V
N‐CH
±100 nA
VDS = 0V, VGS = ±20V
P‐CH
±100
VDS = 24V, VGS = 0V
N‐CH 1 A
VDS = ‐24V, VGS = 0V
P‐CH
‐1
VDS = 20V, VGS = 0V, TJ = 125 °C N‐CH
25
VDS = ‐20V, VGS = 0V, TJ = 125 °C P‐CH
‐25
VDS = 10V, VGS = 10V
N‐CH 7.5
A
VDS = ‐5V, VGS = ‐10V
P‐CH ‐6
VGS = 10V, ID = 7.5A
VGS = ‐10V, ID = ‐6A
N‐CH
P‐CH
18 21
mΩ
26 35
VGS = 4.5V, ID = 5.5A
N‐CH 34 42
VGS = ‐4.5V, ID = ‐5A
P‐CH 45 60
VDS = 5V, ID = 7.5A
N‐CH 16 S
VDS = ‐5V, ID = ‐6A
P‐CH 12
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
N‐CH
N‐CH 520
VGS = 0V, VDS = 15V, f = 1MHz P‐CH 910 pF
P=CH
Coss
N‐CH
VGS = 0V, VDS = ‐15V, f = 1MHz
88
P‐CH 143
Crss
N‐CH 62
P‐CH 108
2012/10/25
p.2
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Gate Resistance
Total Gate Charge1,2
Gate‐Source Charge1,2
Gate‐Drain Charge1,2
Turn‐On Delay Time1,2
Rise Time1,2
Turn‐Off Delay Time1,2
Fall Time1,2
Rg VGS = 15mV, VDS = 0V, f = 1MHz N‐CH
P‐CH
Qg(VGS=10V)
Qg(VGS=‐10V)
Qg(VGS=4.5V)
Qg(VGS=‐4.5V)
Qgs
N‐CH
VDS = 15V, VGS = 10V,
ID = 7.5A
P‐CH
VDS = ‐15V, VGS = ‐10V,
ID = ‐6A
N‐CH
P‐CH
N‐CH
P‐CH
N‐CH
P‐CH
Qgd N‐CH
P‐CH
td(on)
N‐CH
VDS = 15V,
N‐CH
P‐CH
tr ID = 1A, VGS = 10V, RGS = 6Ω N‐CH
P‐CH
P‐CH
td(off)
VDS = ‐15V,
N‐CH
ID = ‐1A, VGS = ‐10V, RGS = 6Ω P‐CH
tf N‐CH
P‐CH
SOURCE‐DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)
Continuous Current
Pulsed Current3
Forward Voltage1
IS N‐CH
P‐CH
ISM N‐CH
P‐CH
VSD
IF = IS, VGS = 0V
N‐CH
P‐CH
Reverse Recovery Time trr N‐CH
P‐CH
Peak Reverse Recovery Current
IRM(REC)
IF = IS, dlF/dt = 100A / S
N‐CH
P‐CH
Reverse Recovery Charge
Qrr
N‐CH
1Pulse test : Pulse Width 300 sec, Duty Cycle 2%.
2Independent of operating temperature.
P‐CH
EMB21C03S
2.0 Ω
4.0
11.5
13.3 nC
5
7
1.6
2.1
2.8
3.2
11
12 nS
16
18
36
38
20
22
2.3
A
‐2.3
9.2
‐9.2
1.2 V
‐1.2
50 nS
55
30 A
‐24
2 nC
2.2
2012/10/25
p.3
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