EMB20P03V PDF даташит
Спецификация EMB20P03V изготовлена «Excelliance MOS» и имеет функцию, называемую «Field Effect Transistor». |
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Детали детали
Номер произв | EMB20P03V |
Описание | Field Effect Transistor |
Производители | Excelliance MOS |
логотип |
5 Pages
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P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
‐30V
D
RDSON (MAX.)
20mΩ
ID
‐18A
G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=‐10A, RG=25Ω
L = 0.05mH
Power Dissipation
TA = 25 °C
TA = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
EMB20P03V
LIMITS
±25
‐18
‐13
‐72
‐10
5
2.5
2.5
1
‐55 to 150
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
350°C / W when mounted on a 1 in2 pad of 2 oz copper.
2013/9/18
TYPICAL
MAXIMUM
6
50
UNIT
°C / W
p.1
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ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
EMB20P03V
LIMITS
UNIT
MIN TYP MAX
STATIC
Drain‐Source Breakdown Voltage
Gate Threshold Voltage
Gate‐Body Leakage
Zero Gate Voltage Drain Current
On‐State Drain Current1
Drain‐Source On‐State Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(ON)
RDS(ON)
gfs
VGS = 0V, ID = ‐250A
VDS = VGS, ID = ‐250A
VDS = 0V, VGS = ±20V
VDS = 0V, VGS = ±25V
VDS = ‐24V, VGS = 0V
VDS = ‐20V, VGS = 0V, TJ = 125 °C
VDS = ‐5V, VGS = ‐10V
VGS = ‐10V, ID = ‐10A
VGS = ‐4.5V, ID = ‐7A
VDS = ‐5V, ID = ‐10A
DYNAMIC
‐30
‐1 ‐1.5
‐18
17.5
26
24
‐3
±100
±500
‐1
‐10
20
35
V
nA
A
A
mΩ
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge1,2
Gate‐Source Charge1,2
Gate‐Drain Charge1,2
Turn‐On Delay Time1,2
Rise Time1,2
Turn‐Off Delay Time1,2
Fall Time1,2
Ciss
Coss
Crss
Rg
Qg(VGS=10V)
Qg(VGS=4.5V)
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = ‐15V, f = 1MHz
VGS = 15mV, VDS = 0V, f = 1MHz
VDS = ‐15V, VGS = ‐10V,
ID = ‐10A
VDS = ‐15V,
ID = ‐1A, VGS = ‐10V, RGS = 2.7Ω
SOURCE‐DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)
Continuous Current
Pulsed Current3
Forward Voltage1
Reverse Recovery Time
Reverse Recovery Charge
IS
ISM
VSD
IF = IS A, VGS = 0V
trr
IF = IS, dlF/dt = 100A / S
Qrr
2013/9/18
1407
208
164
4.5
20.3
9.8
3.2
4.9
10
8
25
6
pF
Ω
nC
nS
‐3.5
A
‐14
‐1.2 V
32 nS
26 nC
p.2
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1Pulse test : Pulse Width 300 sec, Duty Cycle 2%.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
Ordering & Marking Information:
Device Name: EMB20P03V for EDFN 3 x 3
B20
B20P03: Device Name
P03
ABCDEFG
ABCDEFG: Date Code
Outline Drawing
b
0.10
e
D
D1
L1
Dimension in mm
A1
c
A
Dimension A A1 b c D D1 E E1 E2 E3 e L L1
Min.
0.70 0 0.24 0.10 2.95 2.25 3.15 2.95 1.65
0.30
Typ. 0.80 0.30 0.152 3.00 2.35 3.20 3.00 1.75 0.575 0.65 0.40 0.13
Max.
0.90 0.05 0.37 0.25 3.15 2.45 3.40 3.15 1.96
0.50
Recommended minimum pads
2.6
0.65 0.4
EMB20P03V
Ѳ1
0∘
10∘
12∘
2013/9/18
p.3
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Номер в каталоге | Описание | Производители |
EMB20P03A | Field Effect Transistor | Excelliance MOS |
EMB20P03G | P-Channel Logic Level Enhancement Mode Field Effect Transistor | Excelliance MOS |
EMB20P03H | Field Effect Transistor | Excelliance MOS |
EMB20P03P | Field Effect Transistor | Excelliance MOS |
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