|
|
PDF EMB20P03H Data sheet ( Hoja de datos )
| Número de pieza | EMB20P03H | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de EMB20P03H (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
|
No Preview Available !
P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
‐30V
D
RDSON (MAX.)
20mΩ
ID
‐35A
G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=‐20A, RG=25Ω
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
EMB20P03H
LIMITS
±25
‐35
‐25
‐84
‐20
20
10
50
20
‐55 to 150
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
350°C / W when mounted on a 1 in2 pad of 2 oz copper.
2013/9/18
TYPICAL
MAXIMUM
2.5
50
UNIT
°C / W
p.1
1 page  
10
I D = ‐ 20A
8
6
Gate Charge Characteristics
VD S = ‐ 5V
‐ 15V
‐ 10V
4
2
0
0 5 10 15 20
Q g ‐ Gate Charge( nC )
25
EMB20P03H
2000
1600
1200
800
400
0
0
Capacitance Characteristics
Ciss
f = 1 MHz
VG S = 0 V
Coss
Crss
5 10 15 20
‐ VD S , Drain‐Source Voltage( V )
25
30
MAXIMUM SAFE OPERATING AREA
300
200
100
50
R d s (o n ) Limit
10μ s
100μ s
20 1ms
10
5
2
1
0.5
0.5
10ms
D1C00ms
VG S = ‐10V
RSIθ N J C G= L2E. 5P° UC/LWSE
Tc = 25° C
1 10
‐VD S ,DRAIN‐ SOURCE VOLTAGE( V )
100
SINGLE PULSE MAXIMUM POWER DISSIPATION
3000
RSθI N JC G= L2E. 5P° UC/LWSE
TC = 25° C
2500
2000
1500
1000
500
0 0.01
0.1 1 10 100
SINGLE PULSE TIME ( mSEC )
1000
1
D u ty C y cle = 0 .5
0.5
0.3
0.2 0.2
0.1 0.1
0.05
0.05
0.02
0.03
0.01
0.02
Single Pulse
0.01
1 0‐2
1 0‐1
Transient Therm al Response Curve
Notes:
DM
1 10
t 1 ,Tim e ( m SEC )
1 .D u ty C y cle ,D =
t1
t2
2 .Rθ J C =2 .5 °C /W
3 .TJ ‐ TC = P * R θ J C (t)
4 .Rθ J C (t)= r(t) * RθJC
100
1000
2013/9/18
p.5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet EMB20P03H.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| EMB20P03A | Field Effect Transistor | Excelliance MOS |
| EMB20P03G | P-Channel Logic Level Enhancement Mode Field Effect Transistor | Excelliance MOS |
| EMB20P03H | Field Effect Transistor | Excelliance MOS |
| EMB20P03P | Field Effect Transistor | Excelliance MOS |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |