EMB14P03G PDF даташит
Спецификация EMB14P03G изготовлена «Excelliance MOS» и имеет функцию, называемую «Field Effect Transistor». |
|
Детали детали
Номер произв | EMB14P03G |
Описание | Field Effect Transistor |
Производители | Excelliance MOS |
логотип |
5 Pages
No Preview Available ! |
P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
‐30V
D
RDSON (MAX.)
14mΩ
ID
‐12A
G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
EMB14P03G
LIMITS
UNIT
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 100 °C
Avalanche Current
Avalanche Energy
L = 0.1mH, ID=‐20A, RG=25Ω
Power Dissipation
TA = 25 °C
TA = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
PD
Tj, Tstg
±25
‐12
‐9
‐48
‐20
20
2.5
1
‐55 to 150
V
A
mJ
W
°C
100% UIS testing in condition of VD=‐15V, L=0.1mH, VG=‐10V, IL=‐12A, Rated VDS=‐30V P‐CH
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNIT
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
350°C / W when mounted on a 1 in2 pad of 2 oz copper.
2012/12/30
25
°C / W
50
p.1
No Preview Available ! |
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
EMB14P03G
LIMITS
UNIT
MIN TYP MAX
STATIC
Drain‐Source Breakdown Voltage
Gate Threshold Voltage
Gate‐Body Leakage
Zero Gate Voltage Drain Current
On‐State Drain Current1
Drain‐Source On‐State Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(ON)
RDS(ON)
gfs
VGS = 0V, ID = ‐250A
VDS = VGS, ID = ‐250A
VDS = 0V, VGS = ±20V
VDS = 0V, VGS = ±25V
VDS = ‐24V, VGS = 0V
VDS = ‐20V, VGS = 0V, TJ = 125 °C
VDS = ‐5V, VGS = ‐10V
VGS = ‐10V, ID = ‐12A
VGS = ‐4.5V, ID = ‐9A
VDS = ‐5V, ID = ‐12A
DYNAMIC
‐30
‐1 ‐1.5
‐12
12
17
28
‐3
±100
±500
‐1
‐10
14
21
V
nA
A
A
mΩ
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge1,2
Gate‐Source Charge1,2
Gate‐Drain Charge1,2
Turn‐On Delay Time1,2
Rise Time1,2
Turn‐Off Delay Time1,2
Fall Time1,2
Ciss
Coss
Crss
Qg(VGS=‐10V)
Qg(VGS=‐4.5V)
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = ‐15V, f = 1MHz
VDS = ‐15V, VGS = ‐10V,
ID = ‐10A
VDS = ‐15V,
ID = ‐1A, VGS = ‐10V, RGS = 2.7Ω
SOURCE‐DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)
Continuous Current
Pulsed Current3
Forward Voltage1
IS
ISM
VSD
Reverse Recovery Time
trr
Reverse Recovery Charge
Qrr
1Pulse test : Pulse Width 300 sec, Duty Cycle 2%.
IF = IS, VGS = 0V
IF = IS, dlF/dt = 100A / S
2270
342
300
39.3
16
4.9
7.5
20
12
55
15
‐3.6
‐14.4
‐1.2
52
60
pF
nC
nS
A
V
nS
nC
2012/12/30
p.2
No Preview Available ! |
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
Ordering & Marking Information:
Device Name: EMB14P03G for SOP‐8
B14
P03
ABCDEFG
B14P03: Device Name
ABCDEFG: Date Code
Outline Drawing
D
F
G
E
I
IH
BC
A
J
K
Dimension in mm
Dimension A B C D E F G H I J K
in.
4.70 3.70 5.80 0.33
1.20 0.08 0.40 0.19 0.25 0∘
Typ.
1.27
Max.
5.10 4.10 6.20 0.51
1.62 0.28 0.83 0.26 0.50 8∘
2012/12/30
EMB14P03G
p.3
Скачать PDF:
[ EMB14P03G.PDF Даташит ]
Номер в каталоге | Описание | Производители |
EMB14P03G | Field Effect Transistor | Excelliance MOS |
Номер в каталоге | Описание | Производители |
TL431 | 100 мА, регулируемый прецизионный шунтирующий регулятор |
Unisonic Technologies |
IRF840 | 8 А, 500 В, N-канальный МОП-транзистор |
Vishay |
LM317 | Линейный стабилизатор напряжения, 1,5 А |
STMicroelectronics |
DataSheet26.com | 2020 | Контакты | Поиск |