EMF90P02A PDF даташит
Спецификация EMF90P02A изготовлена «Excelliance MOS» и имеет функцию, называемую «Field Effect Transistor». |
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Детали детали
Номер произв | EMF90P02A |
Описание | Field Effect Transistor |
Производители | Excelliance MOS |
логотип |
5 Pages
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P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
‐20V
D
RDSON (MAX.)
90mΩ
ID
‐10A
G
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
IDM
PD
Tj, Tstg
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
2012/12/26
EMF90P02A
LIMITS
±12
‐10
‐6.5
‐40
25
10
‐55 to 150
UNIT
V
A
W
°C
MAXIMUM
5
110
UNIT
°C / W
p.1
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ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
EMF90P02A
LIMITS
UNIT
MIN TYP MAX
STATIC
Drain‐Source Breakdown Voltage
Gate Threshold Voltage
Gate‐Body Leakage
Zero Gate Voltage Drain Current
On‐State Drain Current1
Drain‐Source On‐State Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(ON)
RDS(ON)
gfs
VGS = 0V, ID = ‐250A
VDS = VGS, ID = ‐250A
VDS = 0V, VGS = ±12V
VDS = ‐16V, VGS = 0V
VDS = ‐16V, VGS = 0V, TJ = 125 °C
VDS = ‐5V, VGS = ‐4.5V
VGS = ‐4.5V, ID = ‐6A
VGS = ‐2.5V, ID = ‐3A
VDS = ‐5V, ID = ‐5A
DYNAMIC
‐20
‐0.3 ‐0.75 ‐1.2
±100
‐1
‐25
‐10
72 90
120 150
4.5
V
nA
A
A
mΩ
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge1,2
Gate‐Source Charge1,2
Gate‐Drain Charge1,2
Turn‐On Delay Time1,2
Rise Time1,2
Turn‐Off Delay Time1,2
Fall Time1,2
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = ‐10V, f = 1MHz
VDS = ‐10V, VGS = ‐4.5V,
ID = ‐6A
VDS = ‐10V,
ID = ‐1A, VGS = ‐4.5V, RGS = 6Ω
382
70
pF
60
7.2
1.2 nC
2.3
10
20
15
nS
12
SOURCE‐DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)
Continuous Current
Pulsed Current3
IS
ISM
Forward Voltage1
VSD
1Pulse test : Pulse Width 300 sec, Duty Cycle 2%.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
IF = IS, VGS = 0V
‐10
A
‐40
1.3 V
2012/12/26
p.2
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TYPICAL CHARACTERISTICS
12
Typical output characteristics
V G = ‐4.5 V
9
6
‐4.0V
‐3.5V
‐3.0V
3
‐2.5V
0
0
1 23 4
‐VD S ‐ Drain‐Source Voltage( V )
5
Normalized on‐Resistance v.s. Junction Temperature
1.8
I D = ‐3A
1.6 V G = ‐4.5V
1.4
1.2
1.0
0.8
0.6
‐50 ‐25
0 25
50 75 100 125 150
T J ‐ Junction Temperature (° C)
Capacitance Characteristics
600
f =1MHz
VGS=0 V
500
400
300
Ciss
200
100
Coss
Crss
0
0 5 10 15 20
‐ VD S , Drain‐Source Voltage( V )
2012/12/26
EMF90P02A
On‐Resistance Variation with Gate‐Source Voltage
0.30
I D = ‐ 3A
0.20
0.25
0.20
0.15
T A = 125°C
0.10
T A = 25°C
0.05
0.00
0 1 2 3 4 5 6 7 8 9 10
‐ VG S ‐ Gate‐Source Voltage( V )
10
I D = ‐ 3A
8
Gate Charge Characteristics
6
VD S = ‐ 5V ‐ 10V
4
2
0
0 3 6 9 12 15
Q g ‐ Gate Charge( nC )
Body Diode Forward Voltage Variation with
Source Current and Temperature
10
V G S = 0V
1
T A = 125° C
0.1
0.01 25° C ‐55° C
0.001
0.0001
0
0.2 0.4 0.6 0.8 1.0
‐VS D ‐ Body Diode Forward Voltage(V)
1.2
p.3
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Номер в каталоге | Описание | Производители |
EMF90P02A | Field Effect Transistor | Excelliance MOS |
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