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Número de pieza | EMB12K03GP | |
Descripción | Field Effect Transistor | |
Fabricantes | Excelliance MOS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EMB12K03GP (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! Dual Asymmetric N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
N‐CH‐Q1 N‐CH‐Q2
BVDSS
30V 30V
RDSON (MAX.)
15.5mΩ 12.5mΩ
ID 9A 10A
UIS, Rg 100% Tested
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
L = 0.1mH, ID=10A, RG=25Ω
Repetitive Avalanche Energy2
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
EMB12K03GP
LIMITS
±20 ±20
9 10
6 7
36 40
12 12
5 5
2.5 2.5
2
1.1
‐55 to 150
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
362.5°C / W when mounted on a 1 in2 pad of 2 oz copper.
2012/2/21
TYPICAL
MAXIMUM
25
62.5
UNIT
°C / W
p.1
1 page N‐Channel‐Q1
40
On‐Region Characteristics
VG S = 10V 6V
7V
5V
32
24
4.5V
16
8
0
01
2
34
VD S ‐ Drain Source Voltage( V )
1.9 On‐Resistance Variation with Temperature
I D = 9A
VG S = 10V
1.6
1.3
1.0
0.7
0.4
‐50 ‐25 0 25 50 75 100 125
T J ‐ Junction Temperature (°C)
30
Transfer Characteristics
VD S = 10V
25
20
T A = ‐55° C
25° C
15
10
125° C
5
0
1 1.5 2.0 2.5 3.0
VG S ‐ Gate‐Source Voltage( V )
5
150
3.5
2012/2/21
EMB12K03GP
On‐Resistance Variation with Drain Current and Gate Voltage
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0
V G S = 4.5 V
5.0 V
6.0 V
7.0 V
10 V
8 16 24 32 40
I D ‐ Drain Current(A)
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
2
On‐Resistance Variation with Gate‐Source Voltage
I D = 4.5 A
T A = 125°C
T A = 25°C
46
8
VG S ‐ Gate‐Source Voltage( V )
10
Body Diode Forward Voltage Variation
with Source Current and Temperature
100
VG S = 0V
10 T A = 125° C
1 25° C
0.1 ‐55° C
0.01
0.001
0
0.2 0.4
0.6 0.8 1.0 1.2 1.4
VS D ‐ Body Diode Forward Voltage( V )
p.5
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet EMB12K03GP.PDF ] |
Número de pieza | Descripción | Fabricantes |
EMB12K03GP | Field Effect Transistor | Excelliance MOS |
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