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Número de pieza | EMB25A06S | |
Descripción | Field Effect Transistor | |
Fabricantes | Excelliance MOS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EMB25A06S (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
60V
RDSON (MAX.)
30mΩ
ID 7A
UIS, 100% Tested
Pb‐Free Lead Plating
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
VGS
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
Avalanche Current
IAS
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=12A, RG=25Ω
L = 0.05mH
EAS
EAR
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
PD
Tj, Tstg
100% UIS testing in condition of VD=30V, L=0.1mH, VG=10V, IL=7A, Rated VDS=60V N‐CH
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
362.5°C / W when mounted on a 1 in2 pad of 2 oz copper.
EMB25A06S
LIMITS
±20
7
5
28
12
7.2
3.6
5
2
‐55 to 150
UNIT
V
A
mJ
W
°C
MAXIMUM
25
62.5
UNIT
°C / W
2012/7/24
p.1
1 page EMB25A06S
Gate Charge Characteristics
10
I D = 7A
8
VD S = 15V
30V
6
4
2
0
0
15 30
Q g ‐ Gate Charge( nC )
45
60
3000
2700
2400
2100
1800
1500
1200
900
600
300
0
0
Ciss
Coss
Crss
10
Capacitance Characteristics
f = 1MHz
V G S = 0 V
20 30 40 50
VD S ‐ Drain‐Source Voltage( V )
60
100
Maximum Safe Operating Area
R D S ( O N ) Limit
10
1
100μs
1ms
10ms
100ms
0.1
VG S = 10V
Single Pulse
R JA = 125°C/W
TA = 25°C
1s
DC
0.01
0.1
1
10
VD S ‐ Drain‐Source Voltage( V )
100
Single Pulse Maximum Power Dissipation
50
Single Pulse
Rθ J A = 125° C/W
40 TA = 25° C
30
20
10
0
0.001
0.01 0.1
1
10
100 1000
1
Duty Cycle = 0.5
Transient Thermal Response Curve
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
10 ‐4
10 ‐3
10 ‐2
10 ‐1
1
Notes:
P DM
t1
1.Duty Cycle,D =t2 t1
t2
2.R θ J A =125°C/W
3.TJ ‐ TA = P * Rθ J A (t)
4.Rθ J A (t)=r(t) * RθJA
10 100
1000
t 1 ,Time (sec)
2012/7/24
p.5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet EMB25A06S.PDF ] |
Número de pieza | Descripción | Fabricantes |
EMB25A06S | Field Effect Transistor | Excelliance MOS |
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