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PDF EMZF20R02W Data sheet ( Hoja de datos )
| Número de pieza | EMZF20R02W | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
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Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
20V
RDSON (MAX.)
20mΩ
ID 8A
Pb‐Free Lead Plating & Halogen Free
ESD Protection
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
VGS
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
Power Dissipation
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
PD
Tj, Tstg
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
Junction‐to‐Ambient3 (t≦10s)
RJA
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
3The value of RJA is measured with the device mounted on a 1 in2 pad of 2 oz copper.
EMZF20R02W
LIMITS
±12
8
6.5
40
2.1
1.3
‐55 to 150
UNIT
V
A
W
°C
MAXIMUM
60
105
UNIT
°C / W
2013/11/1
p.1
1 page  
EMZF20R02W
Gate‐Charge Characteristics
5
ID = 6A
VDS= 5V
4
10V
3
2
1
1800
1500
1200
900
600
300
0
0 3 6 9 12 15 18 21
Qg, Gate Charge ( nC )
0
0
Capacitance Characteristics
f =1MHz
VGS=0 V
Ciss
Coss
Crss
5 10 15
VDS, Drain‐Source Voltage( V )
20
100
Maximum Safe Operating Area
RDS(ON) LIMIT
10
10μs
100μs
1ms
10ms
1
100ms
1s
DC
VGS =4.5V
0.1 SINGLE PULSE
RθJA=105°C/W
TA=25°C
0.01
0.1
1 10
VGS,Drain‐Source Voltage( V )
100
Single Pulse M axim um Pow er D issipation
30
Single Pulse
24
Rθ J A = 1 0 5 ° C / W
T A = 2 5 ° C
18
12
6
0
0.001
0.01
0.1 1 10
t 1 ,Tim e ( sec )
100 1000
1
0.5 D=0.5
Transient Thermal Response Curve
0.2
0.2
0.1
0.1
0.05
0.05
0.02
0.01
0.02
Single Pulse
0.01
0.0001
0.001
0.01
0.1
t1, Time( sec )
1
RθJA(t) = r(t) * RθJA
RθJA=105°C/W
t1
t2
TJ‐TA=P*RθJA(t)
Duty Cycle, D= t1/ t2
10 100 300
2013/11/1
p.5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet EMZF20R02W.PDF ] | |
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