EMF20A02G PDF даташит
Спецификация EMF20A02G изготовлена «Excelliance MOS» и имеет функцию, называемую «Field Effect Transistor». |
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Детали детали
Номер произв | EMF20A02G |
Описание | Field Effect Transistor |
Производители | Excelliance MOS |
логотип |
5 Pages
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Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
20V
RDSON (MAX.)
20mΩ
ID 6A
UIS 100% Tested
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
EMF20A02G
LIMITS
UNIT
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=10A, RG=25Ω
L = 0.05mH
Power Dissipation
TA = 25 °C
TA = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
±12
6
4
24
10
5
2.5
2
0.8
‐55 to 150
V
A
mJ
W
°C
100% UIS testing in condition of VD=10V, L=0.1mH, VG=4.5V, IL=6A, Rated VDS=20V N‐CH
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNIT
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
362.5°C / W when mounted on a 1 in2 pad of 2 oz copper.
25
62.5
°C / W
2013/1/11
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ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
EMF20A02G
LIMITS
UNIT
MIN TYP MAX
STATIC
Drain‐Source Breakdown Voltage
Gate Threshold Voltage
Gate‐Body Leakage
Zero Gate Voltage Drain Current
On‐State Drain Current1
Drain‐Source On‐State Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(ON)
RDS(ON)
gfs
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
VDS = 0V, VGS = ±12V
VDS = 16V, VGS = 0V
VDS = 16V, VGS = 0V, TJ = 125 °C
VDS = 5V, VGS = 4.5V
VGS = 4.5V, ID = 6A
VGS = 2.5V, ID = 5A
VDS = 5V, ID = 6A
DYNAMIC
20
0.45 0.8
6
17
23
8
1.2
±100
1
25
20
28
V
nA
A
A
mΩ
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge1,2
Gate‐Source Charge1,2
Gate‐Drain Charge1,2
Turn‐On Delay Time1,2
Rise Time1,2
Turn‐Off Delay Time1,2
Fall Time1,2
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 10V, f = 1MHz
VDS = 10V, VGS = 4.5V,
ID = 6A
VDS = 10V,
ID = 1A, VGS = 4.5V, RGS = 6Ω
560
166 pF
150
8.5
1.5 nC
3.5
12
15
30
nS
13
SOURCE‐DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)
Continuous Current
Pulsed Current3
Forward Voltage1
IS
ISM
VSD
1Pulse test : Pulse Width 300 sec, Duty Cycle 2%.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
IF = IS, VGS = 0V
2.3
A
9.2
1.2 V
2013/1/11
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Ordering & Marking Information:
Device Name: EMF20A02G for SOP‐8
F20
A02
ABCDEFG
AF2B0CAD0E2F:G D: eDvaictee CNoadmee
ABCDEFG: Date Code
Outline Drawing
F
I
GI
DE
BC
A
Dimension in mm
H
J
K
Dimension A B C D E F G H I J K
Min.
4.70 3.70 5.80 0.33
1.20 0.08 0.40 0.19 0.25 0∘
Typ.
1.27
Max.
5.10 4.10 6.20 0.51
1.62 0.28 0.83 0.26 0.50 8∘
2013/1/11
EMF20A02G
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Номер в каталоге | Описание | Производители |
EMF20A02G | Field Effect Transistor | Excelliance MOS |
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