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PDF EMB32A03G Data sheet ( Hoja de datos )
| Número de pieza | EMB32A03G | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
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Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
RDSON (MAX.)
32mΩ
ID 6.5A
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 100 °C
Power Dissipation
TA = 25 °C
TA = 100 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
IDM
PD
Tj, Tstg
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
362.5°C / W when mounted on a 1 in2 pad of 2 oz copper.
2012/10/25
EMB32A03G
LIMITS
±20
6.5
5.5
26
2
0.8
‐55 to 150
UNIT
V
A
W
°C
MAXIMUM
25
62.5
UNIT
°C / W
p.1
1 page  
10
Gate Charge Characteristics
I D = 6.5A
8
6
VD S = 5V
10V
15V
4
2
0
0
36
Q g ‐ Gate Charge( nC )
9
12
100
Maximum Safe Operating Area
10 R D S (O N ) Limit
1
0.1
VG S = 10V
Single Pulse
R J A = 125°C/W
T A = 25°C
100μs
1ms
10ms
100ms
1s
10s
DC
0.01
0.1
1 10
VD S ‐ Drain‐Source Voltage( V )
100
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
Transient Thermal Response Curve
0.001
10 ‐4
10 ‐3
10 ‐2
10 ‐1
t 1 ,Time (sec)
1
2012/10/25
EMB32A03G
500
450
400
350
300
250
200
150
100
50
0
0
Capacitance Characteristics
f = 1MHz
V G S = 0 V
Ciss
Coss
Crss
5 10 15 20
VD S ‐ Drain‐Source Voltage( V )
25
30
Single Pulse Maximum Power Dissipation
50
Single Pulse
Rθ J A = 125°C/W
40 TA = 25°C
30
20
10
0
0.001
0.01 0.1 1 10
t 1 ,Time ( sec )
100 1000
Notes:
P DM
t1
1.Duty Cycle,D = t2 t1
t2
2.Rθ J A =125°C/W
3.TJ ‐ TA = P * Rθ J A (t)
4.Rθ J A (t)=r(t) + RθJA
10 100
1000
p.5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet EMB32A03G.PDF ] | |
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