EMB70A08G PDF даташит
Спецификация EMB70A08G изготовлена «Excelliance MOS» и имеет функцию, называемую «Field Effect Transistor». |
|
Детали детали
Номер произв | EMB70A08G |
Описание | Field Effect Transistor |
Производители | Excelliance MOS |
логотип |
5 Pages
No Preview Available ! |
Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
80V
RDSON (MAX.)
65mΩ
ID 5A
UIS, 100% Tested
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=7A, RG=25Ω
L = 0.05mH
Power Dissipation
TA = 25 °C
TA = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
EMB70A08G
LIMITS
±20
5
3.6
20
7
2.45
1.23
2
0.8
‐55 to 150
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
362.5°C / W when mounted on a 1 in2 pad of 2 oz copper.
2013/7/24
TYPICAL
MAXIMUM
25
62.5
UNIT
°C / W
p.1
No Preview Available ! |
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
EMB70A08G
LIMITS
UNIT
MIN TYP MAX
STATIC
Drain‐Source Breakdown Voltage
Gate Threshold Voltage
Gate‐Body Leakage
Zero Gate Voltage Drain Current
On‐State Drain Current1
Drain‐Source On‐State Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(ON)
RDS(ON)
gfs
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
VDS = 0V, VGS = ±20V
VDS = 64V, VGS = 0V
VDS = 60V, VGS = 0V, TJ = 125 °C
VDS = 5V, VGS = 10V
VGS = 10V, ID = 5A
VGS = 5V, ID = 3A
VDS = 5V, ID = 5A
DYNAMIC
80
V
1.0 1.7 3.0
±100 nA
1 A
25
5
A
55 65
mΩ
68 85
12 S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge1,2
Gate‐Source Charge1,2
Gate‐Drain Charge1,2
Turn‐On Delay Time1,2
Rise Time1,2
Turn‐Off Delay Time1,2
Fall Time1,2
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 30V, f = 1MHz
VDS = 40V, VGS = 10V,
ID = 5A
VDS = 40V,
ID = 1A, VGS = 10V, RGS = 6Ω
SOURCE‐DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)
Continuous Current
Pulsed Current3
IS
ISM
Forward Voltage1
VSD
1Pulse test : Pulse Width 300 sec, Duty Cycle 2%.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
IF = IS, VGS = 0V
1110
60
51
15
1.7
4.1
10
8
18
6
2.3
9.2
1.2
pF
nC
nS
A
V
2013/7/24
p.2
No Preview Available ! |
Ordering & Marking Information:
Device Name: EMB70A08G for SOP‐8
B70
A08
AB7B0CAD0E8F:G D: eDvaitcee CNoadmee
ABCDEFG
ABCDEFG: Date Code
Outline Drawing
F
I
GI
DE
BC
A
H
J
K
Dimension in mm
Dimension A B C D E F G H I J K
Min.
4.70 3.70 5.80 0.33
1.20 0.08 0.40 0.19 0.25 0∘
Typ.
1.27
Max.
5.10 4.10 6.20 0.51
1.62 0.28 0.83 0.26 0.50 8∘
EMB70A08G
2013/7/24
p.3
Скачать PDF:
[ EMB70A08G.PDF Даташит ]
Номер в каталоге | Описание | Производители |
EMB70A08G | Field Effect Transistor | Excelliance MOS |
Номер в каталоге | Описание | Производители |
TL431 | 100 мА, регулируемый прецизионный шунтирующий регулятор |
Unisonic Technologies |
IRF840 | 8 А, 500 В, N-канальный МОП-транзистор |
Vishay |
LM317 | Линейный стабилизатор напряжения, 1,5 А |
STMicroelectronics |
DataSheet26.com | 2020 | Контакты | Поиск |