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PDF EMBA0A10G Data sheet ( Hoja de datos )
| Número de pieza | EMBA0A10G | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
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Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
100V
RDSON (MAX.)
100mΩ
ID 3.5A
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
VGS
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 100 °C
Power Dissipation
TA = 25 °C
TA = 100 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
ID
IDM
PD
Tj, Tstg
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
2013/10/9
EMBA0A10G
LIMITS
±20
3.5
2.5
14
2
0.8
‐55 to 150
UNIT
V
A
W
°C
MAXIMUM
25
62.5
UNIT
°C / W
p.1
1 page  
EMBA0A10G
10
Gate Charge Characteristics
2000
Capacitance Characteristics
I D = 3.5A
8
6
VD S = 50V
80V
1800
1600
1400
1200
1000
Ciss
f = 1M Hz
V G S = 0 V
4
800
600
2
400
Coss
200
0 0 Crss
0 10 20 30 40
Q g ‐ Gate Charge( nC )
0 20 40 60 80 100
VD S ‐ D rain‐Source Voltage( V )
100
Maximum Safe Operating Area
Single Pulse Maximum Power Dissipation
50
Single Pulse
10
R D S ( O N )Limit
1
1001u0SuS
1mS
40
30
Rθ J A = 125°C/W
TA = 25°C
10mS 20
0.1
VG S = 10V
Single Pulse
DC100mS
10
R JA = 125°C/W
TA = 25°C
0.01
0
0.1
1
10
100 1000
0.001
0.01 0.1
1
10
100 1000
VD S ‐ Drain‐Source Voltage( V )
t 1 ,Time ( sec )
1
Transient Thermal Response Curve
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
Notes:
P DM
t1
1.Duty Cycle,D = t2 t1
t2
2.R θ J A =125°C/W
3.TJ ‐ TA = P * Rθ J A (t)
4.Rθ J A (t)=r(t) + RθJA
0.001
10 ‐4
10 ‐3
10 ‐2
10 ‐1
1
10
100 1000
t 1 ,Time (sec)
2013/10/9
p.5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet EMBA0A10G.PDF ] | |
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