EMB12N03V PDF даташит
Спецификация EMB12N03V изготовлена «Excelliance MOS» и имеет функцию, называемую «Field Effect Transistor». |
|
Детали детали
Номер произв | EMB12N03V |
Описание | Field Effect Transistor |
Производители | Excelliance MOS |
логотип |
5 Pages
No Preview Available ! |
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
D
RDSON (MAX.)
11.5mΩ
ID
18.5A
G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
L = 0.1mH, ID=12A, RG=25Ω
Repetitive Avalanche Energy2
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Power Dissipation
TA = 25 °C
TA = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
EAR
PD
PD
Tj, Tstg
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
350°C / W when mounted on a 1 in2 pad of 2 oz copper.
2013/8/16
EMB12N03V
LIMITS
±20
18.5
13.5
74
12
7.2
3.6
21
8.3
2.5
1
‐55 to 150
UNIT
V
A
mJ
W
W
°C
MAXIMUM
6
50
UNIT
°C / W
p.1
No Preview Available ! |
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
EMB12N03V
LIMITS
UNIT
MIN TYP MAX
STATIC
Drain‐Source Breakdown Voltage
Gate Threshold Voltage
Gate‐Body Leakage
Zero Gate Voltage Drain Current
On‐State Drain Current1
Drain‐Source On‐State Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(ON)
RDS(ON)
gfs
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
VDS = 0V, VGS = ±20V
VDS = 24V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 125 °C
VDS = 5V, VGS = 10V
VGS = 10V, ID = 12A
VGS = 4.5V, ID = 7A
VDS = 5V, ID = 12A
DYNAMIC
30
1 1.7
18.5
9.7
13
15
3
±100
1
25
11.5
16
V
nA
A
A
mΩ
S
Input Capacitance
Output Capacitance
Ciss
Coss
VGS = 0V, VDS = 15V, f = 1MHz
Reverse Transfer Capacitance
Crss
Gate Resistance
Total Gate Charge1,2
Gate‐Source Charge1,2
Gate‐Drain Charge1,2
Turn‐On Delay Time1,2
Rise Time1,2
Turn‐Off Delay Time1,2
Fall Time1,2
Rg
Qg(VGS=10V)
Qg(VGS=4.5V)
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 15mV, VDS = 0V, f = 1MHz
VDS = 15V, VGS = 10V,
ID = 12A
VDS = 15V,
ID = 1A, VGS = 10V, RGS = 2.7Ω
SOURCE‐DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)
Continuous Current
Pulsed Current3
Forward Voltage1
IS
ISM
VSD
IF = IS, VGS = 0V
Reverse Recovery Time
trr
Peak Reverse Recovery Current
IRM(REC)
IF = IS, dlF/dt = 100A / S
Reverse Recovery Charge
Qrr
1050
141
87
1.2
17.6
9.0
2.6
4.0
8
8
15
10
2.5
10
1.2
18
40
10
pF
Ω
nC
nS
A
V
nS
A
nC
2013/8/16
p.2
No Preview Available ! |
1Pulse test : Pulse Width 300 sec, Duty Cycle 2%.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
Ordering & Marking Information:
Device Name: EMB12N03V for EDFN 3 x 3
B12
N03 B12N03: Device Name
ABCDEFG
ABCDEFG: Date Code
Outline Drawing
b
0.10
e
D
D1
L1
A1
c
A
EMB12N03V
Dimension in mm
Dimension A A1 b c D D1 E E1 E2 E3 e L L1 Ѳ1
Min.
0.70 0 0.24 0.10 2.95 2.25 3.15 2.95 1.65
0.30
0∘
Typ. 0.80 0.30 0.152 3.00 2.35 3.20 3.00 1.75 0.575 0.65 0.40 0.13 10∘
Max.
0.90 0.05 0.37 0.25 3.15 2.45 3.40 3.15 1.96
0.50
12∘
Recommended minimum pads
2.6
0.65 0.4
2013/8/16
p.3
Скачать PDF:
[ EMB12N03V.PDF Даташит ]
Номер в каталоге | Описание | Производители |
EMB12N03A | Field Effect Transistor | Excelliance MOS |
EMB12N03G | Field Effect Transistor | Excelliance MOS |
EMB12N03H | Field Effect Transistor | Excelliance MOS |
EMB12N03HR | Field Effect Transistor | Excelliance MOS |
Номер в каталоге | Описание | Производители |
TL431 | 100 мА, регулируемый прецизионный шунтирующий регулятор |
Unisonic Technologies |
IRF840 | 8 А, 500 В, N-канальный МОП-транзистор |
Vishay |
LM317 | Линейный стабилизатор напряжения, 1,5 А |
STMicroelectronics |
DataSheet26.com | 2020 | Контакты | Поиск |