EMF30N02H PDF даташит
Спецификация EMF30N02H изготовлена «Excelliance MOS» и имеет функцию, называемую «Field Effect Transistor». |
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Детали детали
Номер произв | EMF30N02H |
Описание | Field Effect Transistor |
Производители | Excelliance MOS |
логотип |
6 Pages
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N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
20V
D
RDSON (MAX.)
30mΩ
ID 10A G
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 70 °C
Power Dissipation
TC = 25 °C
TC = 70 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
IDM
PD
Tj, Tstg
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
362°C / W when mounted on a 1 in2 pad of 2 oz copper.
2012/12/5
EMF30N02H
LIMITS
±12
10
7
40
25
16
‐55 to 150
UNIT
V
A
W
°C
MAXIMUM
5
62
UNIT
°C / W
p.1
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ELECTRICAL CHARACTERISTICS (TA = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
EMF30N02H
LIMITS
UNIT
MIN TYP MAX
STATIC
Drain‐Source Breakdown Voltage
Gate Threshold Voltage
Gate‐Body Leakage
Zero Gate Voltage Drain Current
On‐State Drain Current1
Drain‐Source On‐State Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(ON)
RDS(ON)
gfs
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
VDS = 0V, VGS = ±12V
VDS = 16V, VGS = 0V
VDS = 16V, VGS = 0V, TJ = 125 °C
VDS = 5V, VGS = 4.5V
VGS = 4.5V, ID = 5A
VGS = 2.5V, ID = 4A
VDS = 5V, ID = 5A
DYNAMIC
20
0.45 0.75
10
26
45
7
1.2
±100
1
10
30
51
V
nA
A
A
mΩ
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge1,2
Gate‐Source Charge1,2
Gate‐Drain Charge1,2
Turn‐On Delay Time1,2
Rise Time1,2
Turn‐Off Delay Time1,2
Fall Time1,2
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 10V, f = 1MHz
VDS = 10V, VGS = 4.5V,
ID = 5A
VDS = 10V,
ID = 1A, VGS = 4.5V, RGS = 6Ω
280
47
pF
38
6.2
0.9 nC
2.1
12
15
30
nS
13
SOURCE‐DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)
Continuous Current
Pulsed Current3
Forward Voltage1
IS
ISM
VSD
1Pulse test : Pulse Width 300 sec, Duty Cycle 2%.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
IF = IS, VGS = 0V
10
A
40
1.2 V
2012/12/5
p.2
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Ordering & Marking Information:
Device Name: EMF30N02H for EDFN 5 x 6
F30
N02
ABCDEFG
F30N02: Device Name
ABCDEFG: Date Code
EMF30N02H
2012/12/5
p.3
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Номер в каталоге | Описание | Производители |
EMF30N02A | Field Effect Transistor | Excelliance MOS |
EMF30N02H | Field Effect Transistor | Excelliance MOS |
EMF30N02J | Field Effect Transistor | Excelliance MOS |
EMF30N02JS | Field Effect Transistor | Excelliance MOS |
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