EMB12N03HR PDF даташит
Спецификация EMB12N03HR изготовлена «Excelliance MOS» и имеет функцию, называемую «Field Effect Transistor». |
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Детали детали
Номер произв | EMB12N03HR |
Описание | Field Effect Transistor |
Производители | Excelliance MOS |
логотип |
6 Pages
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N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
D
RDSON (MAX.)
11.5mΩ
ID 25A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
EMB12N03HR
LIMITS
UNIT
Gate‐Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
25
20
100
Avalanche Current
IAS 30
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=30A, RG=25Ω
L = 0.05mH
EAS
EAR
45
22.5
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
PD
Tj, Tstg
35
14
‐55 to 150
100% UIS testing in condition of VD=15V, L=0.1mH, VG=10V, IL=15A, Rated VDS=25V N‐CH
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
V
A
mJ
W
°C
UNIT
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
362°C / W when mounted on a 1 in2 pad of 2 oz copper.
3.5
°C / W
62
2013/8/28
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ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
EMB12N03HR
LIMITS
UNIT
MIN TYP MAX
STATIC
Drain‐Source Breakdown Voltage
Gate Threshold Voltage
Gate‐Body Leakage
Zero Gate Voltage Drain Current
On‐State Drain Current1
Drain‐Source On‐State Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(ON)
RDS(ON)
gfs
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
VDS = 0V, VGS = ±20V
VDS = 24V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 125 °C
VDS = 5V, VGS = 10V
VGS = 10V, ID = 15A
VGS = 4.5V, ID = 10A
VDS = 5V, ID = 15A
DYNAMIC
30
V
1 1.7 3
±100 nA
1 A
25
25
A
9.7 11.5
mΩ
13 16
15 S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge1,2
Gate‐Source Charge1,2
Gate‐Drain Charge1,2
Turn‐On Delay Time1,2
Rise Time1,2
Turn‐Off Delay Time1,2
Fall Time1,2
Ciss
Coss
Crss
Rg
Qg(VGS=10V)
Qg(VGS=4.5V)
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 15V, f = 1MHz
VGS = 15mV, VDS = 0V, f = 1MHz
VDS = 15V, VGS = 10V,
ID = 15A
VDS = 15V,
ID = 1A, VGS = 10V, RGS = 2.7Ω
SOURCE‐DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)
Continuous Current
Pulsed Current3
Forward Voltage1
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
IS
ISM
VSD
trr
IRM(REC)
Qrr
IF = IS, VGS = 0V
IF = IS, dlF/dt = 100A / S
1050
141
87
1.2
17.6
9.0
2.6
4.0
8
8
15
10
25
100
1.3
18
100
10
pF
Ω
nC
nS
A
V
nS
A
nC
2013/8/28
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1Pulse test : Pulse Width 300 sec, Duty Cycle 2%.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
Ordering & Marking Information:
Device Name: EMB12N03HR for EDFN 5 x 6
B12
N03R
ABCDEFG
B12N03R: Device Name
ABCDEFG: Date Code
2013/8/28
EMB12N03HR
p.3
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Номер в каталоге | Описание | Производители |
EMB12N03H | Field Effect Transistor | Excelliance MOS |
EMB12N03HR | Field Effect Transistor | Excelliance MOS |
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