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PDF EMB06N03HR Data sheet ( Hoja de datos )
| Número de pieza | EMB06N03HR | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
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N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
D
RDSON (MAX.)
6mΩ
ID 75A
UIS, Rg 100% Tested
G
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
EMB06N03HR
LIMITS
UNIT
Gate‐Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
75
45
160
Avalanche Current
IAS 53
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=53A, RG=25Ω
L = 0.05mH
EAS
EAR
140
40
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
PD
Tj, Tstg
50
26
‐55 to 150
100% UIS testing in condition of VD=15V, L=0.1mH, VG=10V, IL=40A, Rated VDS=30V N‐CH
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
V
A
mJ
W
°C
UNIT
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
350°C / W when mounted on a 1 in2 pad of 2 oz copper.
2.5
°C / W
50
2012/3/26
p.1
1 page  
G A T E C H A R G E C H A R A C T E R IS T IC S
12
ID= 3 0 A
10
8
VDS =5V
10V
6
15V
EMB06N03HR
C a p a cita n ce C h a ra cte ristics
10 4
10 3
C iss
Coss
4
2
0
0 15 30 45
Q g ,G A T E C H A R G E (n C )
10 2
C rss
f = 1 M H z
V GS= 0 V
0 5 10 15 20 25
V DS ‐D ra in ‐S o u rce V o lta g e ( V )
30
300
200
100
R d s (o n ) Limit
50
MAXIMUM SAFE OPERATING AREA
10μ s
100μ s
20 1ms
10 10ms
5 D1C00ms
2
1
0.5
0.5
VG S = 10V
RSIθ N J C G= L2E. 5P° UC/LWSE
Tc = 25 °C
1 10
VD S ,DRAIN‐ SOURCE VOLTAGE( V )
100
SINGLE PULSE MAXIMUM POWER DISSIPATION
3000
SRθI N JC G= L2E. 5P° UC/LWSE
TC = 25° C
2500
2000
1500
1000
500
0
0.01
0.1 1
10 100
SINGLE PULSE TIME ( mSEC )
1000
1
D u ty C y cle = 0 .5
0.5
Transient Therm al Response Curve
0.3
0.2 0.2
0.1 0.1
0.05
0.05
0.02
0.03
0.01
0.02
0.01
Single Pulse
10‐2
1 0‐1
Notes:
DM
1 10
t 1 ,Tim e ( m SEC )
1 .D u ty C y cle ,D =
t1
t2
2 .Rθ J C =2 .5 °C /W
3 .TJ ‐ TC = P * R θ J C (t)
4 .Rθ J C (t)= r(t) * RθJC
100
1000
2012/3/26
p.5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet EMB06N03HR.PDF ] | |
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