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PDF EMB16N06H Data sheet ( Hoja de datos )
| Número de pieza | EMB16N06H | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
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N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
60V
D
RDSON (MAX.)
16mΩ
ID 42A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=20A, RG=25Ω
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
2014/3/21
EMB16N06H
LIMITS
±20
42
26
100
20
20
10
50
20
‐55 to 150
UNIT
V
A
mJ
W
°C
MAXIMUM
2.5
62
UNIT
°C / W
p.1
1 page  
Gate Charge Characteristics
10
I D = 20A
8
VD S = 15V 30V
6
4
2
0
0
15 30
Q g ‐ Gate Charge( nC )
45
60
EMB16N06H
4000
3000
2000
Ciss
Capacitance Characteristics
f = 1MHz
VG S = 0 V
1000
0
0
Coss
Crss
10 20 30
VD S ‐ Drain‐Source Voltage( V )
40
103
Maximum Safe Operating Area
102 RDS(ON) Limited
10μs
Single Pulse Maximum Power Dissipation
1200
1000
Single Pulse
Rθ J C = 3.5° C/W
TC = 25° C
800
101
100μs
1ms
10ms
DC
100
TC=25°C
RθJC=3.5°C/W
Vgs=10V
Single Pulse
10‐1
100
VDS, Dra1in0‐1Source Voltage( V ) 102
600
400
200
0
0.01
0.1 1 10
Single Pulse Time( mSEC )
100
1000
1
Transient Thermal Response Curve
Duty Cycle = 0.5
0.5
0.3
0.2 0.2
0.1 0.1
0.05
0.05
Notes:
0.02
0.03
0.01
0.02
Single Pulse
0.01
10‐2
10‐1
1
DM
1.Duty Cycle,D =
t1
t2
2.Rθ J C = 3.5°C/W
3.TJ ‐ T C = P * Rθ J C (t)
4.Rθ J C (t)=r(t) * RθJC
10 100
t 1 ,Time (mSEC)
1000
2014/3/21
p.5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet EMB16N06H.PDF ] | |
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