DataSheet26.com

SLP65R190SJ PDF даташит

Спецификация SLP65R190SJ изготовлена ​​​​«Maple Semiconductor» и имеет функцию, называемую «N-Channel MOSFET».

Детали детали

Номер произв SLP65R190SJ
Описание N-Channel MOSFET
Производители Maple Semiconductor
логотип Maple Semiconductor логотип 

8 Pages
scroll

No Preview Available !

SLP65R190SJ Даташит, Описание, Даташиты
SLP65R190SJ / SLF65R190SJ
650V N-Channel MOSFET
CB-FET
General Description
This Power MOSFET is produced using Maple semi‘s
Advanced Super-Junction technology.
This advanced technology has been especially tailored
to minimize conduction loss, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode.
These devices are well suited for AC/DC power conversion
in switching mode operation for higher efficiency.
Features
- 20A, 650V, RDS(on) typ. = 0.16Ω@VGS = 10 V
- Low gate charge ( typical 70nC)
- High ruggedness
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
D
GDS
TO-220
GDS
TO-220F
G
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25)
- Continuous (TC = 100)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25)
- Derate above 25
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
SLP65R190SJ SLF65R190SJ
650
20 20 *
10 10 *
62 62 * 
±30
485
20
1
4.5
205 35 
1.67
0.3
-55 to +150
300
* Drain current limited by maximum junction temperature.
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/
Thermal Characteristics
Symbol
RθJC
RθJS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
SLP65R190SJ
0.6
0.5
62
SLF65R190SJ
3.6
--
80
Units
/W
/W
/W
Maple Semiconductor CO., LTD
http://www.maplesemi.com
Rev. 00 March. 2013









No Preview Available !

SLP65R190SJ Даташит, Описание, Даташиты
Electrical Characteristics
Symbol
Parameter
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
TC = 25°C unless otherwise noted
Test Conditions
VGS = 0 V, ID = 250 uA
BVDSS Breakdown Voltage Temperature
/ TJ Coefficient
ID = 250 uA, Referenced to 25
IDSS Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = 650 V, VGS = 0 V
VDS = 480 V, TC = 125
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
VDS = VGS, ID = 250 uA
VGS = 10 V, ID = 5 A
VDS = 40 V, ID = 5 A (Note 4)
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Switching Characteristics
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
td(on) Turn-On Delay Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 400 V, ID = 5 A,
RG = 20 Ω
(Note 4, 5)
VDS = 480 V, ID = 10 A,
VGS = 10 V
(Note 4, 5)
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 4.9 A
trr Reverse Recovery Time
VGS = 0 V, IS = 4.9 A,
Qrr Reverse Recovery Charge
dIF / dt = 100 A/us
(Note 4)
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. IAS = 3.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ID, di/dt 200A/us, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300us, Duty cycle 2%
5. Essentially independent of operating temperature
Min
650
--
--
--
--
--
2.5
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
Typ Max Units
-- -- V
0.6 -- V/
-- 1 uA
-- 10 uA
-- 100 nA
-- -100 nA
-- 4.5
0.16 0.19
16 --
V
Ω
S
1440 -- pF
300 -- pF
10 -- pF
25 
55
70
40
70
7.8
9
--
--
--
--
--
--
--
ns
ns
ns
ns
nC
nC
nC
-- 20 A
-- 60 A
-- 1.5 V
475 -- ns
5.8 -- uC
Maple Semiconductor CO., LTD
http://www.maplesemi.com
Rev. 00 March. 2013









No Preview Available !

SLP65R190SJ Даташит, Описание, Даташиты
Typical Characteristics
Figure 1. Power Dissipation for SLP65R190SJ Figure 2. Power Dissipation for SLF65R190SJ
Figure 3. Transient Thermal Response Curve
for SLP65R190SJ
Figure 4. Transient Thermal Response Curve
for SLF65R190SJ
Figure 5. Maximum Safe Operating Area
for SLP65R190SJ@25℃
Figure 6. Maximum Safe Operating Area
for SLF65R190SJ@25℃
Maple Semiconductor CO., LTD
http://www.maplesemi.com
Rev. 00 March. 2013










Скачать PDF:

[ SLP65R190SJ.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
SLP65R190SJN-Channel MOSFETMaple Semiconductor
Maple Semiconductor

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск