MDD06N100 PDF даташит
Спецификация MDD06N100 изготовлена «MagnaChip» и имеет функцию, называемую «N-Channel MOSFET». |
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Детали детали
Номер произв | MDD06N100 |
Описание | N-Channel MOSFET |
Производители | MagnaChip |
логотип |
6 Pages
No Preview Available ! |
MDD06N100
Single N-channel Trench MOSFET 60V, 50A, 10mΩ
ㄹ
General Description
The MDD06N100 uses advanced MagnaChip’s MOSFET
Technology, which provides high performance in on-state
resistance, fast switching performance and excellent
quality. MDD06N100 is suitable device for Synchronous
Rectification For Server and general purpose applications.
Features
VDS = 60V
ID = 50A @VGS = 10V
RDS(ON)
< 10.0 mΩ @VGS = 10V
100% UIL Tested
D
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (1)
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy (2)
TC=25oC (Silicon Limited)
TC=25oC (Package Limited)
TC=100oC
TC=25oC
TC=100oC
Junction and Storage Temperature Range
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient (1)
Thermal Resistance, Junction-to-Case
Apr. 2015. Version 1.0
1
G
S
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
TJ, Tstg
Rating
60
±20
55
50
35
200
60
24
84.5
-55~150
Unit
V
V
A
W
mJ
oC
Symbol
RθJA
RθJC
Rating
50
2.1
Unit
oC/W
MagnaChip Semiconductor Ltd.
No Preview Available ! |
Ordering Information
Part Number
MDD06N100RH
Temp. Range
-55~150oC
Package
D-PAK
Packing
Tape & Reel
Rohs Status
Halogen Free
Electrical Characteristics (TJ =25oC)
Characteristics
Static Characteristics
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain Cut-Off Current
Gate Leakage Current
Drain-Source ON Resistance
Forward Transconductance
Dynamic Characteristics
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol
BVDSS
VGS(th)
IDSS
IGSS
RDS(ON)
gfs
Qg(10V)
Qgs
Qgd
Ciss
Crss
Coss
td(on)
tr
td(off)
tf
VSD
trr
Qrr
Test Condition
ID = 250μA, VGS = 0V
VDS = VGS, ID = 250μA
VDS = 48V, VGS = 0V
VGS = ±20V, VDS = 0V
VGS = 10V, ID = 50A
VDS = 10V, ID = 50A
VDS = 30V, ID = 50A,
VGS = 10V
VDS = 50V, VGS = 0V,
f = 1.0MHz
VGS = 10V, VDS = 30V,
ID = 50A , RG = 3.0Ω
IS = 50A, VGS = 0V
IF = 50A, dl/dt = 200A/μs
Note :
1. Surface mounted FR-4 board by JEDEC (jesd51-7). Continuous current at TC=25℃ is silicon limited
2. EAS is tested at starting Tj = 25℃, L = 1.0mH, IAS =13.0A, VGS = 10V
Min Typ
Max Unit
60 -
1.2 2.2
-
3.2
V
- - 1.0
μA
- - ±0.1
- 7.0 10.0 mΩ
- 55 - S
- 32.2
- 12.5
- 5.0
- 2642.4
- 26.8
- 457.2
- 17.1
- 18.4
- 31.3
- 7.9
-
-
-
-
-
-
-
-
-
-
nC
pF
ns
- 0.80 1.2
- 59.0
-
- 193.2
-
V
ns
nC
Apr. 2015. Version 1.0
2 MagnaChip Semiconductor Ltd.
No Preview Available ! |
100
VGS = 10V
90
8.0V
80
6.0V
70
5.0V
60
50
40
4.5V
30
20 4.0V
10
3.5V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VDS, Drain-Source Voltage [V]
Fig.1 On-Region Characteristics
2.4
2.2 ※ Notes :
1. VGS = 10 V
2.0 2. ID = 10.0 A
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50
-25
0 25 50 75 100 125 150
TJ, Junction Temperature [oC]
Fig.3 On-Resistance Variation with
Temperature
9
8
7 VGS = 10V
6
5
0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 100
ID, Drain Current [A]
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
30
※ Notes :
ID = 10.0A
25
20
15
10 TJ = 25℃
5
0
2 3 4 5 6 7 8 9 10
VGS, Gate to Source Volatge [V]
Fig.4 On-Resistance Variation with
Gate to Source Voltage
50
※ Notes :
45 V = 10V
DS
40
35
30
TJ=25℃
25
20
15
10
5
0
012345
VGS, Gate-Source Voltage [V]
Fig.5 Transfer Characteristics
6
7
Apr. 2015. Version 1.0
3
102
※ Notes :
VGS = 0V
101
100
T =25℃
J
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
VSD, Source-Drain voltage [V]
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
MagnaChip Semiconductor Ltd.
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