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Número de pieza | MDF4N60D | |
Descripción | N-Channel Trench MOSFET | |
Fabricantes | MagnaChip | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MDF4N60D (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! MDF4N60D
N-Channel MOSFET 600V, 4.0A, 2.2Ω
General Description
These N-channel MOSFET are produced using advanced
MagnaChip’s MOSFET Technology, which provides low on-
state resistance, high switching performance and excellent
quality.
These devices are suitable device for SMPS, high Speed
switching and general purpose applications.
Features
VDS = 600V
ID = 4.0A
RDS(ON) ≤ 2.2Ω
@ VGS = 10V
@ VGS = 10V
Applications
Power Supply
PFC
High Current, High Speed Switching
D
TO-220F
MDF Series
G
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage
Gate-Source Voltage
Characteristics
Continuous Drain Current
Pulsed Drain Current(1)
Power Dissipation
Repetitive Avalanche Energy(1)
Peak Diode Recovery dv/dt(3)
Single Pulse Avalanche Energy(4)
Junction and Storage Temperature Range
* Id limited by maximum junction temperature
TC=25oC
TC=100oC
TC=25oC
Derate above 25 oC
Symbol
VDSS
VGSS
ID
IDM
PD
EAR
dv/dt
EAS
TJ, Tstg
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient(1)
Thermal Resistance, Junction-to-Case(1)
Symbol
RθJA
RθJC
Mar. 2012 Version 1.0
1
S
Rating
600
±30
4.0*
2.53*
16*
34.7
0.28
3.47
4.5
170
-55~150
Unit
V
V
A
A
A
W
W/ oC
mJ
V/ns
mJ
oC
Rating
62.5
3.6
Unit
oC/W
MagnaChip Semiconductor Ltd.
1 page Physical Dimensions
3 Leads, TO-220F
Dimensions are in millimeters unless otherwise specified
S y mbol
A
b
b1
C
D
E
e
F
G
L
L1
Q
Q1
¢R
M in
4 .5 0
0 .6 3
1 .1 5
0 .3 3
1 5 .4 7
9 .6 0
2 .3 4
6 .4 8
1 2 .2 4
2 .7 9
2 .5 2
3 .1 0
3 .0 0
Nom
2 .5 4
M ax
4 .9 3
0 .9 1
1 .4 7
0 .6 3
1 6 .1 3
1 0 .7 1
2 .8 4
6 .9 0
1 3 .7 2
3 .6 7
2 .9 6
3 .5 0
3 .5 5
Mar. 2012 Version 1.0
5 MagnaChip Semiconductor Ltd.
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet MDF4N60D.PDF ] |
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