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MDF4N60B PDF даташит

Спецификация MDF4N60B изготовлена ​​​​«MagnaChip» и имеет функцию, называемую «N-Channel Trench MOSFET».

Детали детали

Номер произв MDF4N60B
Описание N-Channel Trench MOSFET
Производители MagnaChip
логотип MagnaChip логотип 

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MDF4N60B Даташит, Описание, Даташиты
MDF4N60B
N-Channel MOSFET 600V, 4.6A, 2.0
General Description
These N-channel MOSFET are produced using advanced
MagnaChip’s MOSFET Technology, which provides low on-
state resistance, high switching performance and excellent
quality.
These devices are suitable device for SMPS, high Speed
switching and general purpose applications.
Features
VDS = 600V
ID = 4.6A
RDS(ON) 2.0Ω
@ VGS = 10V
@ VGS = 10V
Applications
Power Supply
PFC
High Current, High Speed Switching
D
TO-220F
MDF Series
G
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage
Gate-Source Voltage
Characteristics
Continuous Drain Current
Pulsed Drain Current(1)
Power Dissipation
Repetitive Avalanche Energy(1)
Peak Diode Recovery dv/dt(3)
Single Pulse Avalanche Energy(4)
Junction and Storage Temperature Range
* Id limited by maximum junction temperature
TC=25oC
TC=100oC
TC=25oC
Derate above 25 oC
Symbol
VDSS
VGSS
ID
IDM
PD
EAR
dv/dt
EAS
TJ, Tstg
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient(1)
Thermal Resistance, Junction-to-Case(1)
Symbol
RθJA
RθJC
Jun. 2011 Version 1.1
1
S
Rating
600
±30
4.6*
2.9*
18.4*
34.7
0.28
9.25
4.5
170
-55~150
Unit
V
V
A
A
A
W
W/ oC
mJ
V/ns
mJ
oC
Rating
62.5
3.6
Unit
oC/W
MagnaChip Semiconductor Ltd.









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MDF4N60B Даташит, Описание, Даташиты
Ordering Information
Part Number
MDF4N60BTH
Temp. Range
-55~150oC
Package
TO-220F
Packing
Tube
RoHS Status
Halogen Free
Electrical Characteristics (Ta =25oC)
Characteristics
Symbol
Static Characteristics
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain Cut-Off Current
Gate Leakage Current
Drain-Source ON Resistance
Forward Transconductance
Dynamic Characteristics
BVDSS
VGS(th)
IDSS
IGSS
RDS(ON)
gfs
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Maximum Continuous Drain to
Source Diode Forward Current
Source-Drain Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery
Charge
Qg
Qgs
Qgd
Ciss
Crss
Coss
td(on)
tr
td(off)
tf
IS
VSD
trr
Qrr
Test Condition
ID = 250μA, VGS = 0V
VDS = VGS, ID = 250μA
VDS = 600V, VGS = 0V
VGS = ±30V, VDS = 0V
VGS = 10V, ID = 2.3A
VDS = 30V, ID = 2.3A
VDS = 480V, ID = 4.6A, VGS = 10V(3)
VDS = 25V, VGS = 0V, f = 1.0MHz
VGS = 10V, VDS = 300V, ID = 4.6A,
RG = 25Ω(3)
IS = 4.6A, VGS = 0V
IF = 4.6A, dl/dt = 100A/μs(3)
Note :
Min
600
2.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C.
2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C.
3. ISD 4.6A, di/dt200A/us, VDD=50V, Rg =25Ω, Starting TJ=25°C
4. L=14.8mH, IAS=4.6A, VDD=50V, Rg =25Ω, Starting TJ=25°C,
Typ
-
-
-
-
1.7
4
12.0
2.1
4.4
505
3.0
60
12
20
36
25
4.6
-
243
1.5
Max
-
4.0
1
100
2.0
-
-
-
-
-
-
-
-
-
-
-
-
1.4
-
-
Unit
V
μA
nA
Ω
S
nC
pF
ns
A
V
Ns
μC
Jun. 2011 Version 1.1
2 MagnaChip Semiconductor Ltd.









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MDF4N60B Даташит, Описание, Даташиты
8 Vgs=5.0V
=5.5V
7 =6.0V
=6.5V
6 =7.0V
=8.0V
5 =10.0V
=15.0V
4
3
2 Notes
1. 250Pulse Test
1 2. TC=25
0
0 5 10 15 20
V ,Drain-Source Voltage [V]
DS
Fig.1 On-Region Characteristics
25
3.0
Notes :
2.5
1. VGS = 10 V
2. I = 2.3A
D
2.0
1.5
1.0
0.5
0.0
-50
0 50 100 150
TJ, Junction Temperature [oC]
Fig.3 On-Resistance Variation with
Temperature
200
3.5
3.0
2.5
VGS=10.0V
2.0
VGS=20V
1.5
1.0
0.5
02468
I ,Drain Current [A]
D
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
10
1.2
Notes :
1. V = 0 V
GS
2. I = 250
D
1.1
1.0
0.9
0.8
-50
0 50 100 150
TJ, Junction Temperature [oC]
200
Fig.4 Breakdown Voltage Variation vs.
Temperature
* Notes ;
1. Vds=30V
10
1
150
-55
25
0.1
2468
VGS [V]
Fig.5 Transfer Characteristics
10
Notes :
1. V = 0 V
GS
10 2.250s Pulse test
150
1
25
0.1
0.0
0.2 0.4 0.6 0.8 1.0
VSD, Source-Drain Voltage [V]
1.2
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
Jun. 2011 Version 1.1
3 MagnaChip Semiconductor Ltd.










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