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PDF MDS1651 Data sheet ( Hoja de datos )
| Número de pieza | MDS1651 | |
| Descripción | N-Channel Trench MOSFET | |
| Fabricantes | MagnaChip | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MDS1651 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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MDS1651
Single N-Channel Trench MOSFET 30V, 11.6A, 17mΩ
General Description
The MDS1651 uses advanced MagnaChip’s MOSFET
Technology, which provides low on-state resistance,
high switching performance and excellent reliability.
MDS1651 is suitable device for PWM, Load Switching
and general purpose applications.
Features
à VDS = 30V
à ID = 11.6A@VGS = 10V
à RDS(ON)
< 17mΩ @VGS = 10V
< 22mΩ @VGS = 4.5V
Applications
à Portable application
5(D)
6(D)
7(D)
8(D)
D
4(G)
3(S)
2(S)
1(S)
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage
Gate-Source Voltage
Characteristics
Continuous Drain Current
Pulsed Drain Current
Power Dissipation (1)
Single Pulse Avalanche Energy (2)
Junction and Storage Temperature Range
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient (1)
Thermal Resistance, Junction-to-Case
G
TC=25oC
TC=70oC
TA=25oC
TA=70oC
October 2008. Version 1.0
1
S
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
TJ, Tstg
Rating
30
±20
11.6
9.2
50
3.1
2
80
-55~150
Unit
V
V
A
A
A
W
mJ
oC
Symbol
RθJA
RθJC
Rating
40
24
Unit
oC/W
MagnaChip Semiconductor Ltd.
1 page  
Physical Dimensions
8 Leads SOIC
Dimensions are in millimeters unless otherwise specified
October 2008. Version 1.0
5 MagnaChip Semiconductor Ltd.
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MDS1651.PDF ] | |
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