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PDF MDS5651 Data sheet ( Hoja de datos )
| Número de pieza | MDS5651 | |
| Descripción | Dual N-Channel Trench MOSFET | |
| Fabricantes | MagnaChip | |
| Logotipo |  |
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MDS5651
Dual N-Channel Trench MOSFET 30V, 7.5A, 26mΩ
General Description
The MDS5651 uses advanced MagnaChip’s trench MOSFET
Technology to provide high performance in on-state resistance,
switching performance and reliability
Low RDS(ON), low gate charge can be offering superior benefit in
the application.
Features
VDS = 30V
ID = 7.5A @VGS = 10V
RDS(ON)
< 26mΩ @VGS = 10V
< 39mΩ @VGS = 4.5V
Applications
Inverters
General purpose applications
6(D2)5(D2)
7(D1)
8(D1)
3(S24) (G2)
2(G1)
1(S1)
D1 D2
G1
G2
S1
S2
Absolute Maximum Ratings (Ta =25oC)
Drain-Source Voltage
Gate-Source Voltage
Characteristics
Continuous Drain Current(1)
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy(2)
Junction and Storage Temperature Range
Ta=25oC
Ta=100oC
Ta=25oC
Ta=100oC
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient(Steady-State)(1)
Thermal Resistance, Junction-to-Case
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
TJ, Tstg
Symbol
RθJA
RθJC
Rating
30
±20
7.5
6.5
30
2
0.8
20
-55~150
Unit
V
V
A
A
A
W
mJ
oC
Rating
62.5
34
Unit
oC/W
June. 2009. Version 1.1
1 MagnaChip Semiconductor Ltd.
1 page  
Physical Dimensions
8 Leads SOIC
Dimensions are in millimeters unless otherwise specified
June. 2009. Version 1.1
5 MagnaChip Semiconductor Ltd.
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MDS5651.PDF ] | |
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