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PDF MDS1652E Data sheet ( Hoja de datos )
| Número de pieza | MDS1652E | |
| Descripción | N-Channel Trench MOSFET | |
| Fabricantes | MagnaChip | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MDS1652E (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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Preliminary – Subject to change without notice
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MDS1652E
Single N-channel Trench MOSFET 30V, 16A, 5.0mΩ
ㄹ
General Description
The MDS1652E uses advanced MagnaChip’s MOSFET
Technology, which provides high performance in on-state
resistance, fast switching performance and excellent
quality. Excellent low RDS(ON), low gate charge and
operation for Battery Applications.
Features
VDS = 30V
ID = 16A @VGS = 10V
RDS(ON) (MAX)
< 5.0mΩ @VGS = 10V
< 8.5mΩ @VGS = 4.5V
5(D)
6(D)
7(D)
8(D)
4(G)
3(S)
2(S)
1(S)
D
G
S
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage
Gate-Source Voltage
Characteristics
Continuous Drain Current (1)
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy(2)
Junction and Storage Temperature Range
TA=25oC
TA=100oC
TA=25oC
TA=100oC
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient (1)
Thermal Resistance, Junction-to-Case
Apr. 2011 Rev 2.2
1
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
TJ, Tstg
Rating
30
±20
16
10
60
2.5
1.0
112
-55~150
Unit
V
V
A
A
W
mJ
oC
Symbol
RθJA
RθJC
Rating
50
25
Unit
oC/W
MagnaChip Semiconductor Ltd.
1 page  
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Package Dimension
Preliminary – Subject to change without notice
8 Leads, SOIC
Dimensions are in millimeters, unless otherwise specified
Apr. 2011 Rev 2.2
5 MagnaChip Semiconductor Ltd.
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MDS1652E.PDF ] | |
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