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MDV1529E PDF даташит

Спецификация MDV1529E изготовлена ​​​​«MagnaChip» и имеет функцию, называемую «N-Channel Trench MOSFET».

Детали детали

Номер произв MDV1529E
Описание N-Channel Trench MOSFET
Производители MagnaChip
логотип MagnaChip логотип 

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MDV1529E Даташит, Описание, Даташиты
MDV1529E
Single N-channel Trench MOSFET 30V, 28A, 4.5mΩ
General Description
The MDV1529E uses advanced MagnaChips MOSFET
Technology, which provides high performance in on-state
resistance, fast switching performance and excellent
quality. MDV1529E is suitable for DC/DC converter and
general purpose applications.
Features
VDS = 32V
ID = 28A @VGS = 10V
RDS(ON)
< 4.5mΩ @VGS = 10V
< 6.5mΩ @VGS = 4.5V
DD DD
DD DD
D
S SSG
GS SS
PDFN33
G
S
Absolute Maximum Ratings (Ta = 25oC unless otherwise specified)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (1)
Characteristics
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy (2)
Junction and Storage Temperature Range
TC=25oC (Silicon limited)
TC=25oC (Package limited)
TC=70oC
TC=25oC
TC=70oC
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
TJ, Tstg
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient (1)
Thermal Resistance, Junction-to-Case
Symbol
RθJA
RθJC
Rating
30
±20
56.4
28
28
84
27.7
17.7
136
-55~150
Unit
V
V
A
A
W
mJ
oC
Rating
36
4.5
Unit
oC/W
Jul. 2012 Version 1.0
1 MagnaChip Semiconductor Ltd.









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MDV1529E Даташит, Описание, Даташиты
Ordering Information
Part Number
MDV1529EURH
Temp. Range
-55~150oC
Package
PDFN33
Packing
Tape & Reel
Quantity
5000 units
RoHS Status
Halogen Free
Electrical Characteristics (Ta = 25oC unless otherwise specified)
Characteristics
Static Characteristics
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain Cut-Off Current
Gate Leakage Current
Drain-Source ON Resistance
Dynamic Characteristics
Total Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage
Symbol
BVDSS
VGS(th)
IDSS
IGSS
RDS(ON)
Qg(10V)
Qg(4.5V)
Qgs
Qgd
Ciss
Crss
Coss
td(on)
tr
td(off)
tf
VSD
Test Condition
ID = 250μA, VGS = 0V
VDS = VGS, ID = 250μA
VDS = 32V, VGS = 0V
VGS = ±16V, VDS = 0V
VGS = 10V, ID = 16A
VGS = 4.5V, ID = 13A
VDS = 15.0V, ID = 16A,
VGS = 10V
VDS = 15.0V, VGS = 0V,
f = 1.0MHz
VGS = 10V, VDS = 15.0V,
ID = 16A, RG = 3.0Ω
IS = 16A, VGS = 0V
Min
32
1.3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Note :
1. Surface mounted FR-4 board by JEDEC (jesd51-7)
2. EAS is tested at starting Tj = 25, L = 0.1mH, IAS = 30.4A, VDD = 27V, VGS = 10V.
Typ Max Unit
--
1.9 2.7
V
- 10
μA
- ±10
3.7 4.5
5.2 6.5
44.0
22.5
7.0
11.0
2050
290
410
9.0
5.5
250
215
-
-
-
-
-
-
-
-
-
-
-
nC
pF
ns
0.7 1.2
V
Jul. 2012 Version 1.0
2 MagnaChip Semiconductor Ltd.









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MDV1529E Даташит, Описание, Даташиты
20
3.5V
4.0V
4.5V
8.0V
V = 10V
GS
10
3.0V
0
0.0 0.5 1.0 1.5
VDS, Drain-Source Voltage [V]
Fig.1 On-Region Characteristics
2.0
2.0
Notes :
1.8
1. VGS = 10 V
2. ID = 16.0 A
1.6
1.4
1.2
1.0
0.8
0.6
-50
-25
0 25 50 75 100 125 150
TJ, Junction Temperature [oC]
Fig.3 On-Resistance Variation with
Temperature
20
Notes :
VDS = 5V
16
12
8 TA=25
4
0
01234
VGS, Gate-Source Voltage [V]
Fig.5 Transfer Characteristics
5
8
7
6
VGS = 4.5V
5
4
3 VGS = 10V
2
1
0
5 10 15 20
ID, Drain Current [A]
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
30
Notes :
ID = 16.0A
25
20
15
10
5
TA = 25
0
2 3 4 5 6 7 8 9 10
VGS, Gate to Source Volatge [V]
Fig.4 On-Resistance Variation with
Gate to Source Voltage
Notes :
VGS = 0V
101
100
TA=25
10-1
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
VSD, Source-Drain voltage [V]
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
Jul. 2012 Version 1.0
3 MagnaChip Semiconductor Ltd.










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