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PDF 2N7002 Data sheet ( Hoja de datos )
| Número de pieza | 2N7002 | |
| Descripción | N-Channel Advanced Power MOSFET | |
| Fabricantes | Ruichips | |
| Logotipo |  |
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 1. 60V, N-ch, MOSFET - PanJit  Hay una vista previa y un enlace de descarga de 2N7002 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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2N7002
N-Channel Advanced Power MOSFET
Features
• 60V/0.5A,
RDS (ON) =4500mΩ(Typ.)@VGS=10V
RDS (ON) =5250mΩ(Typ.)@VGS=4.5V
• Low On-Resistance
• Super High Dense Cell Design
• Reliable and Rugged
• Lead Free and Green Devices Available (RoHS Compliant)
Applications
• Power Management in Desktop Computer or DC/DC Converters
Pin Description
D
G
S
SOT23
D
G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
①
IDP
300μs Pulse Drain Current Tested
②
ID
Continuous Drain Current(VGS=10V)
PD Maximum Power Dissipation
RθJC
RθJA③
Thermal Resistance-Junction to Case
Thermal Resistance-Junction to Ambient
Drain-Source Avalanche Ratings
④
EAS
Avalanche Energy, Single Pulsed
S
N-Channel MOSFET
Rating
Unit
TA=25°C
60
±20
150
-55 to 150
1.25
V
°C
°C
A
TA=25°C
TA=25°C
TA=70°C
TA=25°C
TA=70°C
2A
0.5
A
0.4
1
W
0.64
- °C/W
125 °C/W
TBD
mJ
Ruichips Semiconductor Co., Ltd
Rev. A– SEP., 2013
1
www.ruichips.com
1 page  
2N7002
Typical Characteristics
Output Characteristics
1.0
10V 6V
0.8 4.5V
3V
0.6
0.4 2.5V
0.2
2V
0.0
0
1234
VDS - Drain-Source Voltage (V)
5
Drain-Source On Resistance
2.5
VGS=10V
IDS=0.5A
2.0
10000
9000
8000
7000
6000
5000
4000
3000
2000
1000
0
0.0
1
Drain-Source On Resistance
4.5V
10V
0.2 0.4 0.6 0.8
ID - Drain Current (A)
1.0
Source-Drain Diode Forward
1.5
1.0
0.5
0.0
-50
TJ=25°C
Rds(on)=4500mΩ
-25 0 25 50 75 100 125
TJ - Junction Temperature (°C)
150
Capacitance
500
Frequency=1.0MHz
400
300
Ciss
200
100 Coss
Crss
0
1
10
VDS - Drain-Source Voltage (V)
100
0.1 TJ=150°C
TJ=25°C
0.01
0.2
0.4 0.6 0.8 1 1.2
VSD - Source-Drain Voltage (V)
1.4
10
9 VDS=48V
IDS=0.5A
8
Gate Charge
7
6
5
4
3
2
1
0
0246
QG - Gate Charge (nC)
8
Ruichips Semiconductor Co., Ltd
Rev. A– SEP., 2013
5
www.ruichips.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 2N7002.PDF ] | |
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