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MDS1754 PDF даташит

Спецификация MDS1754 изготовлена ​​​​«MagnaChip» и имеет функцию, называемую «N-channel Trench MOSFET».

Детали детали

Номер произв MDS1754
Описание N-channel Trench MOSFET
Производители MagnaChip
логотип MagnaChip логотип 

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MDS1754 Даташит, Описание, Даташиты
MDS1754
N-Channel Trench MOSFET, 40V, 7.6A, 29mΩ
General Description
The MDS1754 uses advanced MagnaChip’s Trench
MOSFET Technology to provided high performance in
on-state resistance, switching performance and reliability.
Low RDS(ON), Low Gate Charge can be offering superior
benefit in the application.
Features
VDS = 40V
ID = 7.6 (VGS = 10V)
RDS(ON)
< 29m@VGS = 10V
< 37m@ VGS = 4.5V
Applications
Inverters
General purpose applications
5(D)
6(D)
7(D)
8(D)
4(G)
3(S)
2(S)
1(S)
D
G
S
Absolute Maximum Ratings (TA =25o unless otherwise noted)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy
Junction and Storage Temperature Range
(Note 1)
(Note 2)
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
TJ, Tstg
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1)
Symbol
RθJA
RθJC
Rating
40
±20
7.6
50
2.5
18
-55~+150
Rating
50
25
Unit
V
V
A
A
W
mJ
oC
Unit
oC/W
August 2008. Version1.0
1 MagnaChip Semiconductor Ltd.









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MDS1754 Даташит, Описание, Даташиты
Ordering Information
Part Number
MDS1754RH
Temp. Range
-55~150oC
Package
SOIC-8
Packing
Tape & Reel
Electrical Characteristics (TJ =25oC unless otherwise noted)
RoHS Status
Halogen Free
Characteristics
Static Characteristics
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Leakage Current
Drain-Source ON Resistance
Forward Transconductance
Dynamic Characteristics
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Symbol
Test Condition
BVDSS
VGS(th)
IDSS
IGSS
RDS(ON)
gFS
ID = 250µA, VGS = 0V
VDS = VGS, ID = 250µA
VDS = 32V, VGS = 0V
VGS = ±20V, VDS = 0V
VGS = 10V, ID = 7.6A
VGS = 4.5V, ID = 6.8A
VDS = 10V, ID = 7.6A
Qg
Qgs
Qgd
Ciss
Crss
Coss
td(on)
tr
td(off)
tf
VDD = 28V, ID = 7.6A, VGS = 10V
VDS = 25V, VGS = 0V, f = 1.0MHz
VGS = 10V ,VDD = 20V, ID = 1A,
RGEN=3.3Ω
VSD IS = 7.6A, VGS = 0V
trr
IS = 7.6A, di/dt=100A/us
Qrr
Min Typ Max Unit
40 -
-
1.0 1.8 3.0
V
-1
µA
- - ±0.1
- 22 29
mΩ
28 37
20 - S
- 9.2 -
- 1.7
-
- 2.2 -
- 440 -
- 38 -
- 76 -
- 5.9 -
- 17.3 -
- 16.5 -
- 10.7 -
nC
pF
ns
- 0.88 1.2
V
- 35 - ns
- 8.8 - nC
Notes :
1. Surface mounted RF4 board with 2oz. Copper.
2. Starting TJ=25°C, L=1mH, IAS=6A VDD=20V, VGS=10V
August 2008. Version1.0
2 MagnaChip Semiconductor Ltd.









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MDS1754 Даташит, Описание, Даташиты
25
VGS = 10V
20
4.5V
4.0V
8V
15
10
3.0V
5
0
0.0 0.5 1.0 1.5 2.0 2.5
VDS, Drain-Source Voltage [V]
Fig.1 On-Region Characteristics
3.0
60
50
40
30 VGS = 4.5V
20
VGS = 10V
10
5 10 15 20
ID, Drain Current [A]
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
25
1.5
Notes :
1.4 1. VGS = 10 V
2. ID = 7.6 A
1.3
1.2
1.1
1.0
0.9
0.8
0.7
-50 -25 0 25 50 75 100 125
TJ, Junction Temperature [oC]
Fig.3 On-Resistance Variation with
Temperature
150
20
Notes :
VDS = 5V
16
12
TA=125
8
25
-55
4
0
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
VGS, Gate-Source Voltage [V]
Fig.5 Transfer Characteristics
100
80
60
TA = 125
40
20 TA = 25
0
2468
VGS, Gate to Source Volatge [V]
Fig.4 On-Resistance Variation with
Gate to Source Voltage
10
Notes :
VGS = 0V
101
TA=12525
100
0.4
0.6 0.8 1.0 1.2
VSD, Source-Drain voltage [V]
1.4
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
August 2008. Version1.0
3 MagnaChip Semiconductor Ltd.










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