MDS3754A PDF даташит
Спецификация MDS3754A изготовлена «MagnaChip» и имеет функцию, называемую «P-channel Trench MOSFET». |
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Детали детали
Номер произв | MDS3754A |
Описание | P-channel Trench MOSFET |
Производители | MagnaChip |
логотип |
6 Pages
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MDS3754A
P-Channel Trench MOSFET, -40V, -6.0A, 45mΩ
General Description
The MDS3754A uses advanced Magnachip’s Trench
MOSFET Technology to provided high performance in on-
state resistance, switching performance and reliability.
Low RDS(ON), Low Gate Charge can be offering superior
benefit in the application.
5(D)
6(D)
7(D)
8(D)
Features
VDS = -40V
ID = -6.0 @ VGS = -10V
RDS(ON)
<45m @ VGS = -10V
<60m @ VGS = -4.5V
Applications
Inverters
General purpose applications
D
4(G)
3(S)
2(S)
1(S)
Absolute Maximum Ratings (TC =25o)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy
Junction and Storage Temperature Range
(Note 1)
(Note 2)
G
S
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
TJ, Tstg
Rating
-40
±20
-6.0
-50
2.5
32
-55~+150
Unit
V
V
A
A
W
mJ
oC
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1)
Symbol
RθJA
RθJC
Rating
50
25
Unit
oC/W
June 2009. Version 1.0
1 MagnaChip Semiconductor Ltd.
No Preview Available ! |
Ordering Information
Part Number
MDS3754ARH
Temp. Range
-55~150oC
Package
SIOC-8
Packing
Tape & Reel
RoHS Status
Halogen Free
Electrical Characteristics (TJ =25oC unless otherwise noted)
Characteristics
Static Characteristics
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Leakage Current
Drain-Source ON Resistance
Forward Transconductance
Dynamic Characteristics
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Symbol
BVDSS
VGS(th)
IDSS
IGSS
RDS(ON)
gFS
Qg
Qgs
Qgd
Ciss
Crss
Coss
td(on)
tr
td(off)
tf
VSD
trr
Qrr
Test Condition
ID = -250μA, VGS = 0V
VDS = VGS, ID = -250μA
VDS = -32V, VGS = 0V
VGS = ±20V, VDS = 0V
VGS = -10V, ID = -6A
VGS = -4.5V, ID = -4A
VDS = -10V, ID = -6A
VDS = -28V, ID = -4.8A,
VGS = -10V
VDS = -25V, VGS = 0V,
f = 1.0MHz
VGS = -10V ,VDS = -20V,
ID = 1A, RGEN = 3.3Ω
IS = -6A, VGS = 0V
IS = -4.8A, di/dt=100A/us
Note :
1. Surface mounted RF4 board with 2oz. Copper.
2. Starting TJ=25°C, L=1mH, IAS=-8A VDD=-20V, VGS=-10V
Min Typ
Max Unit
-40 -
-1.0 -2.0
-
--
- 34
46
12
-
-3.0
-1
±0.1
45
60
-
V
μA
mΩ
S
- 15.6
-
- 2.4 - nC
- 3.8
-
- 660
-
- 57
- pF
- 100
-
- 14.7
-
- 7.2
-
ns
- 32.1
-
- 12.5
-
- - 1.2 V
- 27.2 - ns
- 19.6 - nC
.
June 2009. Version 1.0
2 MagnaChip Semiconductor Ltd.
No Preview Available ! |
25
VGS = -10V
-8V
-4.5V
20
-4.0V
15
10
5
-3.0V
0
0.0 0.5 1.0 1.5 2.0 2.5
-VDS, Drain-Source Voltage [V]
Fig.1 On-Region Characteristics
3.0
1.8
※ Notes :
1.6
1. VGS = 10 V
2. ID = -6 A
1.4
1.2
1.0
0.8
0.6
-50
-25
0
25 50 75 100 125 150
TJ, Junction Temperature [oC]
Fig.3 On-Resistance Variation with
Temperature
20
※ Notes :
VDS = -5V
16
12
8 TA=125℃
25℃
-55℃
4
0
1.0 1.5 2.0 2.5 3.0 3.5
-VGS, Gate-Source Voltage [V]
Fig.5 Transfer Characteristics
4.0
4.5
120
100
80
60 VGS = -4.5V
40
VGS = -10V
20
0
5
10 15 20 25
-ID, Drain Current [A]
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
120
100
80
TA = 125℃
60
40
TA = 25℃
20
0
2468
VGS, Gate to Source Volatge [V]
Fig.4 On-Resistance Variation with
Gate to Source Voltage
10
※ Notes :
V = 0V
GS
101
TA=125℃
25℃
100
0.4
0.6 0.8 1.0 1.2
-V , Source-Drain voltage [V]
SD
1.4
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
June 2009. Version 1.0
3 MagnaChip Semiconductor Ltd.
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