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PDF MT9410 Data sheet ( Hoja de datos )

Número de pieza MT9410
Descripción N-Channel Power MOSFET / Transistor
Fabricantes MOS-TECH 
Logotipo MOS-TECH Logotipo



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MOS-TECH Semiconductor Co.,LTD
May 2009
07
30V N-Channel PowerTrench® MOSFET
General Description
This N-Channel MOSFET is produced using Mos-tech
Semiconductor’s advanced PowerTrench process that
has been especially tailored to minimize on
-state
resistance and yet maintain superior swit
ching
performance. These devices are well suited for low
voltage and battery powered applications where low in-
line power loss and fast switching are required.
Applications
DC/DC converter
Load switch
Motor drives
Features
5.6 A, 30 V. RDS(ON) = 25 m@ VGS = 10 V
RDS(ON) = 36 m@ V GS = 4.5 V
Low gate charge (9.5 nC typical)
High performance trench technology for extremely
low RDS(ON)
High power and current handling capability
DD
DD
DD
DD
SO-8
Pin 1 SO-8 SS SS SS GG
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
V GSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
MT9410
MT9410
13’’
©2009 MOS-TECH Semiconductor Corporation
54
63
72
81
Ratings
30
±20
5.6
28
2.5
1.2
1.0
–55 to +175
50
25
Tape width
12mm
Units
V
V
A
W
°C
°C/W
Quantity
2500 units

1 page




MT9410 pdf
MOS-TECH Semiconductor Co.,LTD
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