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SM2421PSAN PDF даташит

Спецификация SM2421PSAN изготовлена ​​​​«Sinopower» и имеет функцию, называемую «P-Channel Enhancement Mode MOSFET».

Детали детали

Номер произв SM2421PSAN
Описание P-Channel Enhancement Mode MOSFET
Производители Sinopower
логотип Sinopower логотип 

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SM2421PSAN Даташит, Описание, Даташиты
SM2421PSAN
®
P-Channel Enhancement Mode MOSFET
Features
Pin Description
-30V/-4.8A,
RDS(ON)= 56m(Max.) @ VGS=-10V
RDS(ON)= 68m(Max.) @ VGS=-4.5V
R=
DS(ON)
94m
(Max.)
@
V =-2.5V
GS
Super High Dense Cell Design
Reliable and Rugged
Lead Free and Green Devices Available
(RoHS Compliant)
D
S
G
Top View of SOT-23N
S
Applications
G
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems.
D
Ordering and Marking Information
P-Channel MOSFET
SM2421PS
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
AN : SOT-23N
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel (3000ea/reel)
Assembly Material
G : Halogen and Lead Free Device
SM2421PS AN :
B21XX
XX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines Greento mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright © Sinopower Semiconductor, Inc.
Rev. A.5 - October, 2014
1
www.sinopowersemi.com









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SM2421PSAN Даташит, Описание, Даташиты
SM2421PSAN
®
Absolute Maximum Ratings
(T
A
=
25°C
unless
otherwise
noted)
Symbol
Parameter
Rating
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
ID* Continuous Drain Current
IDM* 300µs Pulsed Drain Current
IS* Diode Continuous Forward Current
TJ Maximum Junction Temperature
TSTG Storage Temperature Range
PD* Maximum Power Dissipation
RθJA* Thermal Resistance-Junction to Ambient
TA=25°C
TA=70°C
TA=25°C
TA=70°C
TA=25°C
TA=70°C
t 10s
Steady state
-30
±12
-4.8
-3.8
-19
-15
-1
150
-55 to 150
1.9
1.2
65
120
RθJL Thermal Resistance-Junction to Lead
Steady state
52
Unit
V
A
°C
W
°C/W
Note : *Surface Mounted on 1in2 pad area, t 10sec.
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Min. Typ.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=-250µA
-30 -
IDSS
Zero Gate Voltage Drain Current
VDS=-24V, VGS=0V
TJ=85°C
-
-
-
-
VGS(th) Gate Threshold Voltage
VDS=VGS, IDS=-250µA
-0.5 -0.9
IGSS Gate Leakage Current
VGS=±12V, VDS=0V
--
VGS=-10V, IDS=-4.8A
RDS(ON) a Drain-Source On-State Resistance VGS=-4.5V, IDS=-3.8A
- 47
- 54
VSDa Diode Forward Voltage
Gate Charge Characteristics b
VGS=-2.5V, IDS=-3A
ISD=-1A, VGS=0V
- 70
- -0.7
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=-15V, VGS=-10V,
IDS=-4.8A
- 13.6
- 1.2
- 2.0
Max.
-
-1
-30
-1.3
±100
56
68
94
-1
-
-
-
Unit
V
µA
V
nA
m
V
nC
Copyright © Sinopower Semiconductor, Inc.
Rev. A.5 - October, 2014
2
www.sinopowersemi.com









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SM2421PSAN Даташит, Описание, Даташиты
SM2421PSAN
®
Electrical
Characteristics
(Cont.)
(T
A
= 25°C unless
otherwise
noted)
Symbol
Parameter
Dynamic Characteristics b
Test Conditions
RG Gate Resistance
VGS=0V,VDS=0V,F=1MHz
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VGS=0V,
VDS=-15V,
Frequency=1.0MHz
td(ON)
tr
td(OF F)
tf
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
VDD=-15V, RL=10,
IDS=-1A, VGEN=-10V,
RG=6
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF=-4.8A, dlSD/dt =100A/µs
Note a : Pulse test ; pulse width300µs, duty cycle2%.
Note b : Guaranteed by design, not subject to production testing.
Min.
-
-
-
-
-
-
-
-
-
-
Typ.
3.6
573
74
53
6.9
12.3
25
13
16
11
Max.
-
-
-
-
-
-
-
-
-
-
Unit
pF
ns
ns
nC
Copyright © Sinopower Semiconductor, Inc.
Rev. A.5 - October, 2014
3
www.sinopowersemi.com










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Номер в каталогеОписаниеПроизводители
SM2421PSANP-Channel Enhancement Mode MOSFETSinopower
Sinopower

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