SM2604NSC PDF даташит
Спецификация SM2604NSC изготовлена «Sinopower» и имеет функцию, называемую «N-Channel Enhancement Mode MOSFET». |
|
Детали детали
Номер произв | SM2604NSC |
Описание | N-Channel Enhancement Mode MOSFET |
Производители | Sinopower |
логотип |
11 Pages
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SM2604NSC
®
N-Channel Enhancement Mode MOSFET
Features
• 30V/7.4A,
RDS(ON)= 24mΩ(max.) @ VGS=10V
RDS(ON)= 32.5mΩ(max.) @ VGS=4.5V
• Reliable and Rugged
• Lead Free and Green Devices Available
(RoHS Compliant)
Applications
Pin Description
S
D
D
G
D
D
Top View of SOT-23-6
(1,2,5,6)
DD DD
• Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems.
• Load Switch.
(3)G
(4)S
N-Channel MOSFET
Ordering and Marking Information
SM2604NS
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
C : SOT-23-6
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel (3000ea/reel)
Assembly Material
G : Halogen and Lead Free Device
SM2604NS C : C04XX
XX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright © Sinopower Semiconductor, Inc.
Rev. A.5 - August, 2014
1
www.sinopowersemi.com
No Preview Available ! |
SM2604NSC
®
Absolute
Maximum
Ratings
(T
A
=
25°C
unless
otherwise
noted)
Symbol
Parameter
Common Ratings
VDSS
VGSS
TJ
TSTG
IS
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
ID Continuous Drain Current
IDMa Pulsed Drain Current
PD Maximum Power Dissipation
RθJA Thermal Resistance-Junction to Ambient
RθJL Thermal Resistance-Junction to Lead
Note a:Pulse width limited by max. junction temperature.
TA=25°C
TA=25°C
TA=70°C
TA=25°C
TA=25°C
TA=70°C
t ≤ 10s
Steady State
Steady State
Rating
30
±20
150
-55 to 150
1
7.4
5.9
29
2
1.28
62.5
110
68
Unit
V
°C
A
W
°C/W
Copyright © Sinopower Semiconductor, Inc.
Rev. A.5 - August, 2014
2
www.sinopowersemi.com
No Preview Available ! |
SM2604NSC
®
Electrical Characteristics
(T
A
=
25°C
unless
otherwise
noted)
Symbol
Parameter
Test Conditions
Min.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON) b Drain-Source On-state Resistance
Diode Characteristics
VSD b Diode Forward Voltage
trr c Reverse Recovery Time
Qrr c Reverse Recovery Charge
Dynamic Characteristics c
VGS=0V, IDS=250µA
VDS=24V, VGS=0V
TJ=85°C
VDS=VGS, IDS=250µA
VGS=±20V, VDS=0V
VGS=10V, IDS=8A
VGS=4.5V, IDS=5A
ISD=1A, VGS=0V
ISD=8A, dlSD/dt=100A/µs
30
-
-
1.3
-
-
-
-
-
-
RG Gate Resistance
VGS=0V,VDS=0V,F=1MHz
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VGS=0V,
VDS=15V,
Frequenc y=1.0MHz
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
Gate Charge Characteristics c
VDD=15V, RL=15Ω,
IDS=1A, VGEN=10V,
RG=6Ω
Qg Total Gate Charge
Qg Total Gate Charge
VDS=15V, VGS=4.5V,
IDS=8A
Qgth Threshold Gate Charge
Qgs Gate-Source Charge
VDS=15V, VGS=10V,
IDS=8A
Qgd Gate-Drain Charge
Note b:Pulse test ; pulse width ≤ 300 µs, duty cycle ≤ 2%.
Note c:Guaranteed by design, not subject to production testing.
1
320
48
25
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
1.8
-
20
25
0.75
14
4.5
1.5
410
73
42
6.8
10
15
3.6
4
8.2
0.8
1.65
1.55
Max.
-
1
30
2.5
±100
24
32.5
1.1
-
-
2.5
500
98
60
-
-
-
-
7
11.5
1.2
2.3
2.1
Unit
V
µA
V
nA
mΩ
V
ns
nC
Ω
pF
ns
nC
Copyright © Sinopower Semiconductor, Inc.
Rev. A.5 - August, 2014
3
www.sinopowersemi.com
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