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SM2329PSA PDF даташит

Спецификация SM2329PSA изготовлена ​​​​«Sinopower» и имеет функцию, называемую «P-Channel Enhancement Mode MOSFET».

Детали детали

Номер произв SM2329PSA
Описание P-Channel Enhancement Mode MOSFET
Производители Sinopower
логотип Sinopower логотип 

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SM2329PSA Даташит, Описание, Даташиты
SM2329PSA
Features
· -20V/-3.3A,
RDS(ON)= 85mW (Max.) @ VGS=-4.5V
RDS(ON)= 120mW (Max.) @ VGS=-2.5V
RDS(ON)= 210mW (Max.) @ VGS=-1.8V
· Reliable and Rugged
· Lead Free and Green Devices Available
(RoHS Compliant)
®
P-Channel Enhancement Mode MOSFET
Pin Description
D
S
G
Top View of SOT-23-3
D
Applications
G
· Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems.
S
P-Channel MOSFET
Ordering and Marking Information
SM2329PS
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
A : SOT-23-3
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel (3000ea/reel)
Assembly Material
G : Halogen and Lead Free Device
SM2329PS A :
B29XX
XX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines Greento mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.2 - April, 2014
1
www.sinopowersemi.com









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SM2329PSA Даташит, Описание, Даташиты
SM2329PSA
®
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
Parameter
ID* Continuous Drain Current
IDM* 300ms Pulsed Drain Current
IS*
TJ
TSTG
Diode Continuous Forward Current
Maximum Junction Temperature
Storage Temperature Range
PD* Maximum Power Dissipation
RqJA* Thermal Resistance-Junction to Ambient
Note: *Surface Mounted on 1in2 pad area, t £ 10sec.
TA=25°C
TA=70°C
TA=25°C
TA=70°C
TA=25°C
TA=70°C
t £ 10s
Steady state
Rating
-20
±12
-3.3
-2.6
-13.2
-10.6
-1
150
-55 to 150
1.4
0.9
90
125
Unit
V
A
°C
W
°C/W
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Min. Typ.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=-250mA
-20 -
IDSS
Zero Gate Voltage Drain Current
VDS=-16V, VGS=0V
TJ=85°C
-
-
-
-
VGS(th) Gate Threshold Voltage
VDS=VGS, IDS=-250mA
-0.5 -0.7
IGSS Gate Leakage Current
VGS=±10V, VDS=0V
--
VGS=-4.5V, IDS=-3.3A
- 65
RDS(ON) a Drain-Source On-State Resistance VGS=-2.5V, IDS=-2.1A
- 90
VGS=-1.8V, IDS=-0.9A
- 130
V
a
SD
Diode Forward Voltage
Gate Charge Characteristics b
ISD=-1A, VGS=0V
- -0.7
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=-10V, VGS=-4.5V,
IDS=-3.3A
- 4.6
- 0.3
- 1.9
Max.
-
-1
-30
-1
±10
85
120
210
-1
-
-
-
Unit
V
mA
V
mA
mW
V
nC
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.2 - April, 2014
2
www.sinopowersemi.com









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SM2329PSA Даташит, Описание, Даташиты
SM2329PSA
®
Electrical Characteristics (Cont.) (TA = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Min.
Dynamic Characteristics b
RG
Ciss
C oss
C rss
td(ON)
tr
td(OF F)
tf
trr
Qrr
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
V GS=0V,VDS =0V,F=1MHz
VGS=0V,
V DS =-10V,
Frequency=1.0MHz
VDD=-10V, RL=10W,
IDS=-1A, VGEN=-4.5V,
RG=6W
ISD=-3.3A, dlSD/dt =100A/µs
-
-
-
-
-
-
-
-
-
-
Note a: Pulse test; pulse width£300ms, duty cycle£2%.
Note b: Guaranteed by design, not subject to production testing.
Typ.
6.8
310
70
60
4.9
14.2
22
9
22
8
Max.
-
-
-
-
-
-
-
-
-
-
Unit
W
pF
ns
nC
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.2 - April, 2014
3
www.sinopowersemi.com










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Номер в каталогеОписаниеПроизводители
SM2329PSAP-Channel Enhancement Mode MOSFETSinopower
Sinopower

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