SM4044CSK PDF даташит
Спецификация SM4044CSK изготовлена «Sinopower» и имеет функцию, называемую «Dual Enhancement Mode MOSFET». |
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Детали детали
Номер произв | SM4044CSK |
Описание | Dual Enhancement Mode MOSFET |
Производители | Sinopower |
логотип |
15 Pages
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SM4044CSK
®
Dual Enhancement Mode MOSFET (N-and P-Channel)
Features
Pin Description
· N Channel
40V/7.5A,
RDS(ON) = 21mW (max.) @ VGS = 10V
RDS(ON) = 25mW (max.) @ VGS = 4.5V
· P Channel
-40V/-5.5A,
RDS(ON) = 38mW (max.) @ VGS =-10V
RDS(ON) = 62mW (max.) @ VGS =-4.5V
· 100% UIS Tested
· Reliable and Rugged
· Lead Free Available (RoHS Compliant)
Applications
· Synchronous Rectification.
· Motor Control
· Fan Pre-driver H-bridge
D1 D1
D2
D2
S1
G1
S2
G2
Top View of SOP - 8
(8) (7)
D1 D1
(6) (5)
D2 D2
(2)
G1
(4)
G2
S1
(1)
N-Channel MOSFET
S2
(3)
P-Channel MOSFET
Ordering and Marking Information
SM4044CS
SM4044CS K :
Assembly Material
Handling Code
Temperature Range
Package Code
4044CS
XXXXX
Package Code
K : SOP-8
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel (2500ea/reel)
Assembly Material
G : Halogen and Lead Free Device
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.2 - July, 2014
1
www.sinopowersemi.com
No Preview Available ! |
SM4044CSK
®
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
Parameter
N Channel P Channel Unit
Common Ratings
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
40 -40 V
±20 ±20 V
TJ
TSTG
IS
ID P
ID
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
Pulse Drain Current Tested
Continuous Drain Current
VGS=10V(N),VGS=-10V(P)
TA=25°C
TA=70°C
150
-55 to 150
2 -2
30 -22
7.5 -5.5
6 -4.5
°C
°C
A
A
A
PD Maximum Power Dissipation
RqJL Thermal Resistance-Junction to Lead
RqJA Thermal Resistance-Junction to Ambient
TA=25°C
TA=70°C
Steady State
t £ 10s
Steady State b
2
1.3
50
62.5
110
2
W
1.3
50 °C/W
62.5
°C/W
110
IAS a Avalanche Current, Single pulse
L=0.5mH
10 10 A
EAS a Avalanche Energy, Single pulse
L=0.5mH
25 25 mJ
Note a:UIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25oC).
Note b:Surface Mounted on 1in2 pad area, t =999sec.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.2 - July, 2014
2
www.sinopowersemi.com
No Preview Available ! |
SM4044CSK
®
N Channel Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON) c Drain-Source On-state Resistance
Diode Characteristics
VSD c Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Dynamic Characteristics d
VGS=0V, IDS=250mA
VDS=32V, VGS=0V
TJ=85°C
VDS=VGS, IDS=250mA
VGS=±20V, VDS=0V
VGS=10V, IDS=6A
VGS=4.5V, IDS=5A
ISD=1A, VGS=0V
IDS=6A, dlSD/dt=100A/ms
RG Gate Resistance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
Gate Charge Characteristics d
VGS=0V,VDS=0V,F=1MHz
VGS=0V,
VDS=20V,
Frequency=1.0MHz
VDD=20V, RL=20W,
IDS=1A, VGEN=10V,
RG=6W
Qg Total Gate Charge
VDS=20V, VGS=10V,
ID S= 6A
Qg Total Gate Charge
Qgth Threshold Gate Charge
Qgs Gate-Source Charge
VDS=20V, VGS=4.5V,
ID S= 6A
Qgd Gate-Drain Charge
Note c:Pulse test ; pulse width£300ms, duty cycle£2%.
Note d:Guaranteed by design, not subject to production testing.
N Channel
Min. Typ. Max.
40 -
-
--1
- - 30
1.5 2 2.5
- - ±100
- 16 21
- 18 25
- 0.75 1.1
- 13 -
- 8.7 -
- 2.5 -
- 815 -
- 95 -
- 60 -
- 7.8 -
- 6.9 -
- 22.4 -
- 4.8 -
- 15.7 22
- 7.5 10.5
- 1.85 -
- 3.24 -
- 2.75 -
Unit
V
mA
V
nA
mW
V
ns
nC
W
pF
ns
nC
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.2 - July, 2014
3
www.sinopowersemi.com
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