MSB92AS1WT1G PDF даташит
Спецификация MSB92AS1WT1G изготовлена «ON Semiconductor» и имеет функцию, называемую «PNP Silicon General Purpose High Voltage Transistor». |
|
Детали детали
Номер произв | MSB92AS1WT1G |
Описание | PNP Silicon General Purpose High Voltage Transistor |
Производители | ON Semiconductor |
логотип |
3 Pages
No Preview Available ! |
MSB92ASWT1G,
MSB92AS1WT1G
PNP Silicon General
Purpose High Voltage
Transistor
This PNP Silicon Planar Transistor is designed for general purpose
amplifier applications. This device is housed in the SC-70/SOT-323
package which is designed for low power surface mount applications.
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Value
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current − Continuous
Electrostatic Discharge
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC
ESD
−300
−300
−5.0
500
HBMu16,000,
MMu2,000
Vdc
Vdc
Vdc
mAdc
V
THERMAL CHARACTERISTICS
Rating
Symbol Max Unit
Power Dissipation (Note 1)
PD
150 mW
Junction Temperature
TJ 150 °C
Storage Temperature Range
Tstg
−55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on a FR-4 glass epoxy printed circuit board using the
minimum recommended footprint.
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SC−70 (SOT−323)
CASE 419
STYLE 3
MARKING DIAGRAM
D3 M G
G
D5 M G
G
1
MSB92ASWT1G
1
MSB92AS1WT1G
Dx = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
MSB92ASWT1G SC−70 3000/Tape & Reel
(Pb−Free)
MSB92AS1WT1G SC−70 3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2010
September, 2010 − Rev. 3
1
Publication Order Number:
MSB92ASWT1/D
No Preview Available ! |
MSB92ASWT1G, MSB92AS1WT1G
ELECTRICAL CHARACTERISTICS
Characteristic
Collector-Emitter Breakdown Voltage
(IC = −1.0 mAdc, IB = 0)
Collector-Base Breakdown Voltage
(IC = −100 mAdc, IE = 0)
Emitter-Base Breakdown Voltage
(IE = −100 mAdc, IE = 0)
Collector-Base Cutoff Current
(VCB = 300 Vdc, IE = 0)
Emitter−Base Cutoff Current
(VEB = −3.0 Vdc, IB = 0)
DC Current Gain (Note 2)
(VCE = −10 Vdc, IC = −1.0 mAdc)
(VCE = −10 Vdc, IC = −10 mAdc)
(VCE = −10 Vdc, IC = −30 mAdc)
Collector-Emitter Saturation Voltage (Note 2)
(IC = −20 mAdc, IB = −2.0 mAdc)
Base−Emitter Saturation Voltage
(IC = −20 mAdc, IB = −2.0 mAdc)
SMALL SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = −10 mAdc, VCE = −20 Vdc, f = 20 MHz)
Collector−Base Capacitance
(VCB = −20 Vdc, IE = 0, f = 1.0 MHz)
2. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%.
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
hFE1
hFE2
hFE3
VCE(sat)
VBE(sat)
Min
−300
Max
−
Unit
Vdc
−300
−
Vdc
−5.0 − Vdc
−
−0.25
mA
−
−0.1
mA
120 200
40 −
25 −
−
−
−0.5
Vdc
−
−0.9
Vdc
fT 50 − MHz
Ccb − 6.0 pF
http://onsemi.com
2
No Preview Available ! |
MSB92ASWT1G, MSB92AS1WT1G
PACKAGE DIMENSIONS
D
e1
3
HE
1
E
2
b
e
0.05 (0.002)
A1
A
SC−70 (SOT−323)
CASE 419−04
ISSUE N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
MILLIMETERS
DIM MIN
NOM MAX
A 0.80
0.90
1.00
A1 0.00
0.05
0.10
A2 0.70 REF
b 0.30
0.35
0.40
c 0.10 0.18 0.25
D 1.80
2.10
2.20
E 1.15
1.24
1.35
e 1.20 1.30 1.40
e1 0.65 BSC
L 0.20
0.38
0.56
H E 2.00 2.10 2.40
MIN
0.032
0.000
0.012
0.004
0.071
0.045
0.047
0.008
0.079
INCHES
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
0.026 BSC
0.015
0.083
MAX
0.040
0.004
0.016
0.010
0.087
0.053
0.055
0.022
0.095
A2 c STYLE 3:
PIN 1. BASE
2. EMITTER
L 3. COLLECTOR
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
1.9
0.075
0.9
0.035
0.7
0.028
ǒ ǓSCALE 10:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5773−3850
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
http://onsemi.com
3
MSB92ASWT1/D
Скачать PDF:
[ MSB92AS1WT1G.PDF Даташит ]
Номер в каталоге | Описание | Производители |
MSB92AS1WT1G | PNP Silicon General Purpose High Voltage Transistor | ON Semiconductor |
Номер в каталоге | Описание | Производители |
TL431 | 100 мА, регулируемый прецизионный шунтирующий регулятор |
Unisonic Technologies |
IRF840 | 8 А, 500 В, N-канальный МОП-транзистор |
Vishay |
LM317 | Линейный стабилизатор напряжения, 1,5 А |
STMicroelectronics |
DataSheet26.com | 2020 | Контакты | Поиск |