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MGA-16516 PDF даташит

Спецификация MGA-16516 изготовлена ​​​​«AVAGO» и имеет функцию, называемую «High Linearity Match Pair Low Noise Amplifier».

Детали детали

Номер произв MGA-16516
Описание High Linearity Match Pair Low Noise Amplifier
Производители AVAGO
логотип AVAGO логотип 

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MGA-16516 Даташит, Описание, Даташиты
MGA-16516
Low Noise, High Linearity Match Pair Low Noise Amplifier
Data Sheet
Description
Avago Technologies’ MGA-16516 is an economical, easy-
to-use GaAs MMIC match pair Low Noise Amplifier (LNA).
The LNA has low noise and high linearity achieved through
the use of Avago Technologies’ proprietary 0.25um GaAs
Enhancement-mode pHEMT process. It is housed in a
miniature 4.0 x 4.0 x 0.85mm3 16-pin Quad-Flat-Non-Lead
(QFN) package. The compact footprint and low profile
coupled with low noise, high gain and high linearity make
the MGA-16516 an ideal choice as a low noise amplifier for
cellular infrastructure for GSM and CDMA. This device is
applicable to both Single and Balance mode. It is designed
for optimum use from 500MHz to 1.7GHz. For optimum
performance at higher frequency from 1.7GHz to 2.7GHz,
the MGA-17516 is recommended. Both MGA-16516 and
MGA-17516 share the same package and pinout.
Package Marking
Features
x 4.0 x 4.0 x 0.85 mm3 16-lead QFN
x Low noise figure
x High linearity performance
x GaAs E-pHEMT Technology[1]
x Low cost small package size: 4.0x4.0x0.85 mm3
x Excellent uniformity in product specifications
x Tape-and-Reel packaging option available
Specifications
850MHz; 5V, 50mA (typ) per section
x 17.7 dB Gain
x 0.4 dB Noise Figure
x 11.8 dBm Input IP3
x 18.3 dBm Output Power at 1dB gain compression
Pin 12
Pin 1
16516 Pin 11
Pin 2
YYWW
Pin 10
GND
Pin 3
XXX Pin 9
Pin 4
TOP VIEW
BOTTOM VIEW
Note:
Package marking provides orientation and identification
“16516” = Device Code
“YYWW“= Year and Work Week
“XXXX” = Last 4 digit of Device Lot Number
Applications
x Low noise amplifier for cellular infrastructure for GSM
and CDMA.
x Other ultra low noise application.
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model = 60 V
ESD Human Body Model = 350 V
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.









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MGA-16516 Даташит, Описание, Даташиты
Pin Configuration
Pin
[5] [16] 1
[6] [15] 2
[7] [14] 3
[8] [13] 4
5
6
7
8
9
10
11
12
13
14
15
16
Use
Not Used
Not Used
Not Used
Not Used
RFin1
Not Used
Not Used
RFin2
Not Used
Not Used
Not Used
Not Used
RFout2
Not Used
Not Used
RFout1
Simplified Schematic
Vgg1
Ca7 Ra1
Ca5
L1
RFin a
RFin b
C1
[5]
[6]
C3 [7]
[8]
Vdd1
Ra4
Ra7
Ca11
Ca9
L2
C2
[16]
[15]
[14] C4
[13]
RFout a
RFout b
L3 Rb7 L4
Cb5 Rb1
Cb7
Vgg2
Rb4 Cb9
Cb11
Vdd2
Note:
x Enhancement mode technology employs positive gate voltage,
thereby eliminating the need of negative gate voltage associated
with conventional depletion mode devices.
2









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MGA-16516 Даташит, Описание, Даташиты
Absolute Maximum Rating [2] TA = 25°C
Symbol Parameter
Vdd Device Voltage, RF output to ground
Vgg Gate Voltage
Pin,max
CW RF Input Power
(Vdd = 5.0, Id=50mA)
Idd Device Current,
RFout to ground per channel
Pdiss Total Power Dissipation [4]
Tj Junction Temperature
TSTG Storage Temperature
Units Absolute Max.
V 5.5
V1
dBm 15
mA 100
W1
°C 150
°C -65 to 150
Thermal Resistance [3]
(Vdd = 5.0V, Idd = 50mA per channel),
Tjc = 49.4°C/W per channel
Notes:
2. Operation of this device in excess of any of
these limits may cause permanent damage.
3. Thermal resistance measured using Infra-Red
Measurement Technique with both channels
turned on hence Idd_total=100mA.
4. Power dissipation with both channels turned
on. Board temperature TB is 25°C. Derate at
20mW/°C for TB>100°C.
Electrical Specifications [7-10]
RF performance at TA = 25°C, Vdd 5V, Idd = 50mA, 850MHz and 900MHz given for each RF channel, measured on demo
board in Figure 5 with component list in Table1 for 850 MHz matching.
Symbol
Parameter and Test Condition
Frequency Units Min. Typ. Max.
Vgg Operational Gate Voltage, Idd = 50mA
V 0.38 0.48 0.63
Gain Gain
850 dB
17.7
900 dB 15.8 17.4 18.8
IIP3 [8]
Output Third Order Intercept Point
850 dBm
11.8
900
dBm 10.5
12.4
NF [9]
Noise Figure
850 dB
0.40
900 dB
0.41 0.70
OP1dB
Output Power at 1dB Gain Compression
850 dBm
18.3
900 dBm
19.3
IRL Input Return Loss, 50: source
850 dB
8.9
900 dB
7.0
ORL Output Return Loss, 50: load
850 dB
3.3
900 dB
4.7
REV ISOL
Reverse Isolation
850 dB
29.9
900 dB
29.5
ISOL1-2
Isolation between RFin1 and RFin2
850 dB
900 dB
45
45
Notes:
7. Measurements at 850 MHz and 900 MHz are obtained using demo board described in Figure 5.
8. IIP3 test condition:
a. FRF1 = 850 MHz, FRF2 = 851 MHz with input power of -15dBm per tone.
b. FRF1 = 900 MHz, FRF2 = 901MHz with input power of -15dBm per tone.
9. For NF data, board losses of the input have not been de-embedded.
10. Use proper bias, heatsink and derating to ensure maximum channel temperature is not exceeded. See absolute maximum ratings and application
note for more details.
3










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