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PDF MBRA120E Data sheet ( Hoja de datos )
| Número de pieza | MBRA120E | |
| Descripción | Surface Mount Schottky Power Rectifier | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MBRA120E (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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MBRA120E, NRVBA120E
Surface Mount
Schottky Power Rectifier
SMA Power Surface Mount Package
Employing the Schottky Barrier principle in a metal−to−silicon
power rectifier. Features epitaxial construction with oxide passivation
and metal overlay contact. Ideally suited for low voltage, high
frequency switching power supplies; free wheeling diodes and
polarity protection diodes.
Features
• Compact Package with J−Bend Leads Ideal for Automated Handling
• Highly Stable Oxide Passivated Junction
• Guardring for Over−Voltage Protection
• Optimized for Low Leakage Current
• NRVBA Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
Mechanical Characteristics:
• Case: Molded Epoxy
• Epoxy Meets UL94, VO at 1/8″
• Weight: 70 mg (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Polarity: Polarity Band Indicates Cathode Lead
• Available in 12 mm Tape, 5000 Units per 13 inch Reel
• Device Meets MSL1 Requirements
• ESD Ratings: Machine Model, C (>400 V)
Human Body Model, 3B (>8000 V)
• Marking: B1E2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(At Rated VR, TC = 125°C)
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
VRRM
VRWM
VR
IO
IFSM
20
1.0
40
V
A
A
Storage Temperature
Tstg −55 to +150 °C
Operating Junction Temperature
TJ −55 to +150 °C
Voltage Rate of Change
(Rated VR, TJ = 25°C)
dv/dt
10,000 V/ms
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
1 AMPERE
20 VOLTS
MARKING
DIAGRAM
SMA
CASE 403D
B1E2
AYWWG
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping†
MBRA120ET3G
SMA
5000 / Tape & Reel
(Pb−Free)
NRVBA120ET3G SMA
5000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
February, 2014 − Rev. 4
1
Publication Order Number:
MBRA120ET3/D
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet MBRA120E.PDF ] | |
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